STYN875 thru STYN1875

Thyristor Discretes (SCRs)

A Dimensions TO-247AD
fer
i
ti
rec
Si

G
G
A
K K

K=Cathode, A=Anode, G=Cate

VRRM VRSM
V V
STYN875 800 900
STYN1075 1000 1100
STYN1275 1200 1300
STYN1675 1600 1700
STYN1875 1800 1900

Symbol Test Conditions Maximum Ratings Unit

ITRMS TVJ=TVJM 75
A
ITAVM TC=85oC; 180o sine 48
TVJ=45oC t=10ms (50Hz), sine 540
VR=0 t=8.3ms (60Hz), sine 580
ITSM A
TVJ=TVJM t=10ms(50Hz), sine 480
VR=0 t=8.3ms(60Hz), sine 500
TVJ=45oC t=10ms (50Hz), sine 1350
VR=0 t=8.3ms (60Hz), sine 1300
i2t A2s
TVJ=TVJM t=10ms(50Hz), sine 1050
VR=0 t=8.3ms(60Hz), sine 1030
TVJ=TVJM repetitive, IT=75A 150
f=50Hz, tp=200us
(di/dt)cr VD=2/3VDRM A/us
IG=0.3A non repetitive, IT=ITAVM 500
diG/dt=0.3A/us
TVJ=TVJM; VDR=2/3VDRM
(dv/dt)cr 1000 V/us
RGK= ; method 1 (linear voltage rise)
TVJ=TVJM tp=30us 10
PGM W
IT=ITAVM tp=300us 5
PGAV 0.5 W
VRGM 10 V
TVJ -40...+140
TVJM 140 o
C
Tstg -40...+125

Md Mounting torque (M3) 0.8...1.2 Nm

Fc Mounting force with clip 20...120 N
Weight typical 6 g

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 STYN875 thru STYN1875
Thyristor Discretes (SCRs)

Symbol Test Conditions Characteristic Values Unit

IR, ID TVJ=TVJM; VR=VRRM; VD=VDRM 5 mA

o
VT IT=75A; TVJ=25 C 1.60 V
VTO For power-loss calculations only (TVJ=125oC) 0.80 V
rT 11 m
o
VD=6V; TVJ=25 C 1.5
VGT V
TVJ=-40oC 1.6
VD=6V; TVJ=25oC 100
IGT mA
TVJ=-40oC 200
VGD TVJ=TVJM; VD=2/3VDRM 0.2 V
IGD 10 mA
o
TVJ=25 C; tp=10us;
IL 150 mA
IG=0.3A; diG/dt=0.3A/us
IH TVJ=25oC; VD=6V; RGK= 100 mA
o
TVJ=25 C; VD=1/2VDRM
tgd 2 us
IG=0.3A; diG/dt=0.3A/us

RthJC DC current 0.60 K/W

RthJH DC current typ. 0.80 K/W

a Max. acceleration, 50 Hz 50 m/s2

100 450 10000

50 Hz, 80% VRRM VR = 0 V

80 400

TVJ = 45°C
60 350
IT 2
It TVJ = 45°C
ITSM 1000

[A] 40 300
[A2s]
[A] TVJ = 125°C
125°C
20 250
150°C TVJ = 125°C

TVJ = 25°C
0 200 100
0,5 1,0 1,5 2,0 0,01 0,1 1 1 2 3 4 5 6 7 8 910
VT [V] t [s] t [ms]
2
Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms)

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Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
 STYN875 thru STYN1875
Thyristor Discretes (SCRs)

10 1000 80
1: IGD, TVJ= 150°C
2: IGT, TVJ = 25°C dc =
3: IGT, TVJ = -40°C 1
0.5
60 0.4
6
100 0.33
3 5
2 tgd typ. Limit IT(AV)M 0.17
VG 0.08
1 1 40
[V] [µs] [A]
4
10
TVJ = 125°C
20
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
0,1 1 0
1 10 100 1000 10000 10 100 1000 0 25 50 75 100 125 150
IG [mA] IG [mA] TC [°C]

Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time Fig. 6 Max. forward current
at case temperature

dc =
80 1 0,4
0.5
RthHA
0.4
0.33 0.6
60 0.8 0,3
0.17
P(AV) 0.08 1.0
2.0 ZthJC
4.0
40 8.0 0,2 Rthi [K/W] ti [s]
[W] [K/W]
0.044 0.011
0.039 0.0001
20 0,1
0.047 0.02
0.09 0.4
0.18 0.12
0 0,0
0 20 40 0 50 100 150 100 101 102 103 104
IT(AV) [A] Tamb [°C] t [ms]

Fig. 7a Power dissipation versus direct output current Fig. 8 Transient thermal impedance junction to case
Fig. 7b and ambient temperature

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Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com