MUBW 35-12 A8

Converter - Brake - Inverter Module (CBI3)

21 22

D7 T1 D1 T3 D3 T5 D5
D11 D13 D15
16 18 20
7 15 17 19
1 2 3 6 5 4

D12 D14 D16 T7 T2 D2 T4 D4 T6 D6 E72873

See outline drawing for pin arrangement
14 11 12 13
10
23
24

8
NTC

Three Phase Brake Chopper Three Phase

Rectifier Inverter
VRRM = 1600 V VCES = 1200 V VCES = 1200 V
IFAVM = 42 A IC25 = 35 A IC25 = 50 A
IFSM = 300 A VCE(sat) = 2.3 V VCE(sat) = 2.5 V

Application: AC motor drives with

Input Rectifier D11 - D16
● Input from single or three phase grid
Symbol Conditions Maximum Ratings ● Three phase synchronous or
asynchronous motor
VRRM 1600 V ● electric braking operation
IFAV TC = 80°C; sine 180° 30 A
Features
IDAVM TC = 80°C; rectangular; d = 1/3; bridge 80 A
IFSM TVJ = 25°C; t = 10 ms; sine 50 Hz 300 A ● High level of integration - only one power
semiconductor module required for the
Ptot TC = 25°C 100 W
whole drive
● NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
Symbol Conditions Characteristic Values ruggedness
(TVJ = 25°C, unless otherwise specified) ● Epitaxial free wheeling diodes with
min. typ. max. Hiperfast and soft reverse recovery
● Industry standard package with insulated
VF IF = 35 A; TVJ = 25°C 1.2 1.4 V copper base plate and soldering pins for
TVJ = 125°C 1.2 V PCB mounting
● Temperature sense included
IR VR = VRRM; TVJ = 25°C 0.02 mA
TVJ = 125°C 0.4 mA
RthJC (per diode) 1.3 K/W

IXYS reserves the right to change limits, test conditions and dimensions. 20070912a

© 2007 IXYS All rights reserved 1-8

 MUBW 35-12 A8

Output Inverter T1 - T6

Symbol Conditions Maximum Ratings

VCES TVJ = 25°C to 150°C 1200 V
VGES Continuous ± 20 V
IC25 TC = 25°C 50 A
IC80 TC = 80°C 35 A
RBSOA VGE = ±15 V; RG = 47 Ω; TVJ = 125°C ICM = 70 A
Clamped inductive load; L = 100 µH VCEK ≤ VCES
tSC VCE = VCES; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C 10 µs
(SCSOA) non-repetitive
Ptot TC = 25°C 225 W

Symbol Conditions Characteristic Values

(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 35 A; VGE = 15 V; TVJ = 25°C 2.5 3.1 V
TVJ = 125°C 2.9 V
VGE(th) IC = 1 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES; VGE = 0 V; TVJ = 25°C 1.1 mA
TVJ = 125°C 1.0 mA
IGES VCE = 0 V; VGE = ± 20 V 200 nA
td(on) 100 ns
tr Inductive load, TVJ = 125°C 70 ns
td(off) VCE = 600 V; IC = 35 A 500 ns
tf VGE = ±15 V; RG = 47 Ω 70 ns
Eon 5.3 mJ
Eoff 3.9 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 1.65 nF
QGon VCE= 600 V; VGE = 15 V; IC = 35 A 120 nC
RthJC (per IGBT) 0.55 K/W

Output Inverter D1 - D6

Symbol Conditions Maximum Ratings

IF25 TC = 25°C 50 A
IF80 TC = 80°C 35 A

Symbol Conditions Characteristic Values

min. typ. max.
VF IF = 35 A; VGE = 0 V; TVJ = 25°C 2.4 2.8 V
TVJ = 125°C 1.8 V
IRM IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C 27 A
trr VR = 600 V; VGE = 0 V 150 ns
RthJC (per diode) 1.19 K/W

20070912a

© 2007 IXYS All rights reserved 2-8

 MUBW 35-12 A8

Brake Chopper T7

Symbol Conditions Maximum Ratings

VCES TVJ = 25°C to 150°C 1200 V
VGES Continuous ± 20 V
IC25 TC = 25°C 35 A
IC80 TC = 80°C 25 A
RBSOA VGE = ±15 V; RG = 82 Ω; TVJ = 125°C ICM = 35 A
Clamped inductive load; L = 100 µH VCEK ≤ VCES
tSC VCE = VCES; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 10 µs
(SCSOA) non-repetitive
Ptot TC = 25°C 180 W

Symbol Conditions Characteristic Values

(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 20 A; VGE = 15 V; TVJ = 25°C 2.3 3.0 V
TVJ = 125°C 2.6 V
VGE(th) IC = 0.6 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES; VGE = 0 V; TVJ = 25°C 0.8 mA
TVJ = 125°C 0.8 mA
IGES VCE = 0 V; VGE = ± 20 V 200 nA
td(on) 100 ns
tr 75 ns
Inductive load, TVJ = 125°C
td(off) 500 ns
VCE = 600 V; IC = 20 A
tf 70 ns
VGE = ±15 V; RG = 82 Ω
Eon 3.1 mJ
Eoff 2.4 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MH z 1 nF
QGon VCE= 600 V; VGE = 15 V; IC = 20 A 70 nC
RthJC 0.7 K/W

Brake Chopper D7

Symbol Conditions Maximum Ratings

VRRM TVJ = 25°C to 150°C 1200 V
IF25 TC = 25°C 16 A
IF80 TC = 80°C 11 A

Symbol Conditions Characteristic Values

min. typ. max.
VF IF = 20 A; TVJ = 25°C 3.2 3.6 V
TVJ = 125°C 2.5 V
IR VR = VRRM; TVJ = 25°C 0.06 mA
TVJ = 125°C 0.07 mA
IRM IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C 13 A
trr VR = 600 V 110 ns
RthJC 3.2 K/W
20070912a

© 2007 IXYS All rights reserved 3-8

 MUBW 35-12 A8

Temperature Sensor NTC

Symbol Conditions Characteristic Values

min. typ. max.
R25 T = 25°C 4.75 5.0 5.25 kΩ
B25/50 3375 K

Module

Symbol Conditions Maximum Ratings

TVJ operating -40...+125 °C
TJM +150 °C
Tstg -40...+125 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~
Md Mounting torque (M5) 3-6 Nm

Symbol Conditions Characteristic Values

min. typ. max.
Rpin-chip 5 mΩ
dS Creepage distance on surface 6 mm
dA Strike distance in air 6 mm
RthCH with heatsink compound 0.01 K/W
Weight 300 g

Dimensions in mm (1 mm = 0.0394")

20070912a

© 2007 IXYS All rights reserved 4-8

 MUBW 35-12 A8

Input Rectifier Bridge D11 - D16

120 200 103

A TVJ = 125°C A A2s

100 TVJ= 45°C
TVJ = 25°C 2
It
IF 150
IFSM
80

TVJ= 45°C
60 100

40 TVJ= 150°C
TVJ= 150°C
50
20
50Hz, 80% VRRM
0 0 102
0.0 0.6 1.2 1.8 V 2.4 0.001 0.01 0.1 s 1 1 2 3 4 5 6 7 ms
8 910
VF t t
Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 I2t versus time per diode
voltage drop per diode
350
W 80
A
300
70
Id(AV)
RthA:
250 60
Ptot 0.05 K/W
0.15 K/W
200 50
0.3 K/W
0.5 K/W
1 K/W 40
150
2 K/W
5 K/W 30
100
20
50
10

0 0
0 40 80 120 A 0 20 40 60 80 100 120 140 C 0 20 40 60 80 100 120 140 C
Id(AV)M Tamb TC
Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180° Fig. 5 Max. forward current
versus case temperature

K/W
1.2

ZthJC

0.8

0.4

DWN 17
0.0
0.001 0.01 0.1 1 s 10
t
Fig. 6 Transient thermal impedance junction to case 20070912a

© 2007 IXYS All rights reserved 5-8

 MUBW 35-12 A8

Output Inverter T1 - T6 / D1 - D6

110 110
VGE = 17 V 15 V VGE = 17 V
100 100
A 13 V A 15 V

IC IC 13 V
80 80

60 60
11 V 11 V
40 40

9V 9V
20 20
TVJ = 25°C TVJ = 125°C
0 0
0 1 2 3 4 5 6 V 7 0 1 2 3 4 5 6 V 7
VCE VCE

Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics

110 110
100 VCE = 20 V 100
A A
IF
IC 80 80

60 60
TVJ = 125°C
40 40
TVJ = 25°C
20 20
TVJ = 125°C
TVJ = 25°C
0 0
4 6 8 10 12 14 V 16 0 1 2 3 V 4
VGE VF

Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics

of free wheeling diode

20 50 200
trr
VCE = 600 V
V IC = 35 A
40
A 160
ns
15 trr
VGE IRM
30 120
10
20 80
TVJ = 125°C
5 VR = 300 V
10 40
IF = 30 A
IRM
MUBW35-12A8
0 0 0
0 40 80 120 nC 160 0 200 400 600 800
A/μs 1000
QG -di/dt

Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off characteristics
of free wheeling diode
20070912a

© 2007 IXYS All rights reserved 6-8

 MUBW 35-12 A8

Output Inverter T1 - T6 / D1 - D6

9 180 6 1200
ns VCE = 600 V ns
Eoff
mJ 150 mJ VGE = ±15 V 1000
RG = 39 Ω
Eon Eoff TVJ = 125°C
6 120 t 4 800 t
td(on)
VCE = 600 V 90 600
VGE = ±15 V td(off)
3 RG = 39 Ω 60 2 400
Eon
TVJ = 125°C
30 200
tr
tf
0 0 0 0
0 20 40 60 A 80 0 20 40 60 A 80
IC IC

Fig. 13 Typ. turn on energy and switching Fig. 14 Typ. turn off energy and switching
times versus collector current times versus collector current

6 160 8 800
VCE = 600 V td(off)
mJ VGE = ±15 V tr ns mJ ns
Eoff
IC = 35 A Eoff
Eon Eon 120 t 6 600
TVJ = 125°C t
4
VCE = 600 V
td(on) VGE = ±15 V
80 4 400
IC = 35 A
TVJ = 125°C
2
40 2 200

tf
0 0 0 0
0 20 40 60 80 Ω 100 87 88 89 90Ω
RG RG

Fig. 15 Typ. turn on energy and switching Fig.16 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor

60 10
K/W
A diode
1
ZthJC
ICM IGBT
40
0.1

0.01
20
single pulse
RG = 39 Ω 0.001
TVJ = 125°C
MUBW3512A8
0 0.0001
0 200 400 600 800 1000 1200 1400 V 0.00001 0.0001 0.001 0.01 0.1 1 s 10
VCE t
Fig. 17 Reverse biased safe operating area Fig. 18 Typ. transient thermal impedance
RBSOA

20070912a

© 2007 IXYS All rights reserved 7-8

 MUBW 35-12 A8

Brake Chopper T7 / D7

50 50
VGE = 15 V
A
40 40
TVJ = 25°C IF
IC A
TVJ = 125°C
30 30

TVJ = 125°C
20 20

TVJ = 25°C
10 10

0 0
0 1 2 3 4 V 5 0 1 2 3 4 V 5
VCE VF
Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics
of free wheeling diode

4 800 3.0 1000

VCE = 600 V
VCE = 600 V
mJ VGE = ±15 V ns ns
mJ VGE = ±15 V
Eoff RG = 82 Ω
3 600 t Eoff IC = 20 A 750 t
TVJ = 125°C
TVJ = 125°C td(off)
td(off)
2 400 2.5 500

Eoff
1 200 250
Eoff
tf tf
0 0 2.0 0
0 5 10 15 20 25 30 A 35 0 20 40 60 80 100 120 Ω 140
IC RG
Fig. 21 Typ. turn off energy and switching Fig. 22 Typ. turn off energy and switching
times versus collector current times versus gate resistor
Temperature Sensor NTC
10
diode
K/W
1
ZthJC IGBT 10000
0.1 Ω

R
0.01
1000

0.001
single pulse

0.0001 100
0.001 0.01 0.1 1 s 10 0 25 50 75 100 125 C 150
t T
Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistorresistance
versus temperature

20070912a

© 2007 IXYS All rights reserved 8-8