4825D PDF

Si4825DY
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY
VDS (V)
30 0.022 @ VGS = 4.5 V 9.2
rDS(on) (W)
0.014 @ VGS = 10 V
ID (A)
11.5
S S S
SO-8
S S S G 1 2 3 4 Top View D D D D P-Channel MOSFET 8 7 6 5 D D D D
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID 9.2 IDM IS PD TJ, Tstg 2.5 3.0 1.9 55 to 150 50 1.3 1.5 W 0.9 _C 6.5 A
Symbol
VDS VGS
10 secs
Steady State
30 "25
Unit
V
11.5
8.1
THERMAL RESISTANCE RATINGS

Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 x 1 FR4 Board. Document Number: 71291 S-10679Rev. A, 31-Jul-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
32 68 15
Maximum
42 85 18
Unit
_C/W
Si4825DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "25 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS v 5 V, VGS = 10 V VGS = 10 V, ID = 11.5 A VGS = 4.5 V, ID = 9.2 A VDS = 15 V, ID = 11.5 A IS = 2.5 A, VGS = 0 V 50 0.012 0.018 28 0.8 1.2 0.014 0.022 1.0 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.5 A, di/dt = 100 A/ms VDD = 15 15 V V, , RL = 15 W ID ^ 1 1 A, A VGEN = 10 10 V V, RG = 6 W VDS = 15 15 V V, VGS = 10 10 V V, ID = 11.5 11 5 A 55 15.5 7.5 15 13 97 51 45 25 20 150 75 80 ns 71 nC C
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics
50 VGS = 10 thru 5 V 4V 40 I D Drain Current (A) I D Drain Current (A) 40 50
Transfer Characteristics
30
30
20 3V 10
20 TC = 125_C 25_C 55_C 2 3 4 5
10
0 0 1 2 3 4 5
0 0 1
VDS Drain-to-Source Voltage (V)
VGS Gate-to-Source Voltage (V)
www.vishay.com S FaxBack 408-970-5600
Document Number: 71291 S-10679Rev. A, 31-Jul-00
Si4825DY
New Product
On-Resistance vs. Drain Current
0.025 r DS(on) On-Resistance ( W ) 5000
Vishay Siliconix
Capacitance
0.015 VGS = 10 V 0.010
C Capacitance (pF)
0.020
VGS = 4.5 V
4000
Ciss
3000
2000 Coss
0.005
1000 Crss
0 0 10 20 30 40 50
0 0 6 12 18 24 30
ID Drain Current (A)
VDS Drain-to-Source Voltage (V)
Gate Charge
10 V GS Gate-to-Source Voltage (V) VDS = 15 V ID = 11.5 A 8 1.6
On-Resistance vs. Junction Temperature

VGS = 10 V ID = 11.5 A 1.4
r DS(on) On-Resistance (W) (Normalized) 24 36 48 60
1.2
1.0
0.8
0 0 12 Qg Total Gate Charge (nC)
0.6 50
25
25
50
75
100
125
150
TJ Junction Temperature (_C)
Source-Drain Diode Forward Voltage

50 0.05
On-Resistance vs. Gate-to-Source Voltage
r DS(on) On-Resistance ( W )
0.04 ID = 11.5 A 0.03
I S Source Current (A)
TJ = 150_C 10
0.02
TJ = 25_C
0.01
1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD Source-to-Drain Voltage (V)
0 0 2 4 6 8 10 VGS Gate-to-Source Voltage (V)
Si4825DY
Vishay Siliconix
New Product

Threshold Voltage
1.0 0.8 40 V GS(th) Variance (V) 0.6 0.4 0.2 0.0 10 0.2 0.4 50 0 102 ID = 250 mA Power (W) 30 50
Single Pulse Power, Junction-to-Ambient
29
25
25
50
75
100
125
150
101
1 Time (sec)
10
100
600
TJ Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient

2 1 Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2
Notes:
0.1 0.1 0.05

t1 PDM
0.02
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 68_C/W
t1 t2
Single Pulse 0.01 104 103 102 101 1 Square Wave Pulse Duration (sec)
3. TJM TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot

2 1 Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 104 103 102 101 Square Wave Pulse Duration (sec) 1 10
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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Si4825DY

P-Channel 30-V (D-S) MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

THERMAL RESISTANCE RATINGS

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

20 TC = 125_C 25_C 55_C 2 3 4 5

VDS Drain-to-Source Voltage (V)

VGS Gate-to-Source Voltage (V)

www.vishay.com S FaxBack 408-970-5600

Document Number: 71291 S-10679Rev. A, 31-Jul-00

0.015 VGS = 10 V 0.010

ID Drain Current (A)

VDS Drain-to-Source Voltage (V)

On-Resistance vs. Junction Temperature

r DS(on) On-Resistance (W) (Normalized) 24 36 48 60

0 0 12 Qg Total Gate Charge (nC)

TJ Junction Temperature (_C)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

0.04 ID = 11.5 A 0.03

I S Source Current (A)

0 0 2 4 6 8 10 VGS Gate-to-Source Voltage (V)

Document Number: 71291 S-10679Rev. A, 31-Jul-00

www.vishay.com S FaxBack 408-970-5600

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Single Pulse Power, Junction-to-Ambient

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Effective Transient Thermal Impedance

0.1 0.1 0.05

2. Per Unit Base = RthJA = 68_C/W

3. TJM TA = PDMZthJA(t) 4. Surface Mounted

Normalized Thermal Transient Impedance, Junction-to-Foot

Normalized Effective Transient Thermal Impedance

0.2 0.1 0.1 0.05 0.02

www.vishay.com S FaxBack 408-970-5600

Document Number: 71291 S-10679Rev. A, 31-Jul-00

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