R18 - EDC Lab Manual

Department of Electronics and Communication Engineering
BVRIT HYDERABAD College of Engineering for Women

Rajiv Gandhi Nagar, Bachupally, Hyderabad -90
Lab Manual
Name of the Lab Course: Electronic Devices and Circuits Lab
Lab Course Code : EC306PC
Year and Semester : II Year I Semester
Regulations : R18
Prepared by Verified by
R. Swathi Reddy A. Radha

Assistant Professor. Assoc. Prof.
College Vision and Mission

Vision
To emerge as the best among the institutes of technology and research in the country dedicated to thecause of
promoting quality technical education.
Mission
 To achieve academic excellence through innovative learning practices.
 To enhance intellectual ability and technical competency for a successful career.
 To encourage research and innovation.
 To nurture students towards holistic development with leadership skills, life skills and
human values.
Vision and Mission of the Department
Vision
To emerge as a centre of academic and research excellence in Electronics and Communication

Engineering and create globally competent women technocrats with a high degree of social
consciousness in a holistic learning environment.
Mission
 To provide quality education to the students with emphasis on training related to latest
technologies as per industrial needs
 To impart research culture, professional ethics and moral values to the students by committed
andcompetent faculty striving for excellence.
 To inculcate a perceptive alacrity in students to identify real life problems, formulate strategies
andevolve into contextually effective solutions.
.
Program Educational Objectives (PEOs)
After three to six years of graduation, the graduates of this program will be able to
 PEO-1: Excel in contemporary problem solving in Electronics and Communication

Engineering and the allied fields through the knowledge-base provided by
the program.
 PEO-2: Demonstrate their technical, communication and leadership skills in
professional environment or as entrepreneurs with social responsibility.
 PEO-3: Analyze the latest issues and technology growth in the field of Electronics
and Communication Engineering and update their knowledge and skills
accordingly through continuous learning.
 PEO-4: Demonstrate ethical and human values in multicultural and multidisciplinary
environments.
Program Specific Outcomes (PSOs)
The graduates of this program will be able to
 PSO-1: Provide optimized solutions for digital, signal processing and communication
systems.
 PSO-2: Develop compact, energy efficient and low cost products to assist the
differently abled people.
Program Outcomes (POs)
1. Engineering Knowledge: Apply the knowledge of mathematics, science, engineering
fundamentals and an engineering specialization to the solution of complex engineering
problems.
2. Problem Analysis: Identify, formulate, review research literature, andanalyze complex
engineering problems reaching substantiated conclusions using first principles of
mathematics, natural sciences, and engineering sciences.
3. Design / Development of solutions: Design solutions for complex engineering problems and
design system components or processes that meet the specified needs with appropriate
consideration for the public health and safety, and the cultural, societal, and environmental
considerations.
4. Conduct investigations of complex problems: Use research-based knowledge and research
methods including design of experiments, analysis and interpretation of data, and synthesis of
the information to provide valid conclusions.
5. Modern tool usage: Create, select, and apply appropriate techniques, resources, and modern
engineering and IT tools including prediction and modeling to complex engineering activities
with an understanding of the limitations.
6. The engineer and society: Apply reasoning informed by the contextual knowledge to assess
societal, health, safety, legal and cultural issues and the consequent responsibilities relevant
to the professional engineering practice.
7. Environment and sustainability: Understand the impact of the professional engineering
solutions in societal and environmental contexts, and demonstrate the knowledge of, and need
for sustainable development.
8. Ethics: Apply ethical principles and commit to professional ethics and responsibilities and
norms of the engineering practice.
9. Individual and team work: Function effectively as an individual and as amember or leader
in diverse teams, and in multidisciplinary settings.
10. Communication: Communicate effectively on complex engineering activities with the
engineering community and with society at large, such as being able to comprehend and write
effective reports and design documentation, make effective presentations, and give and
receive clear instructions.
11. Project management and finance: Demonstrate knowledge and understanding of the
engineering management principles and apply these to one’s own work, as a member and
leader in a team, to manage projects and in multi disciplinary environments.
12. Life-long learning: Recognize the need for and have the preparation and ability to engage in
independent and lifelong learning in the broadest context of technological change.
Electronic Devices and Circuits Lab EC306PC

II Year – I Semester
Syllabus as per JNTU Hyderabad
List of Experiments
PART- A: (Only for Viva-voce Examinations)

ELECTRONICS WORKSHOP PRACTICE
1. Identification, Specifications, Testing of R, L,C Components (color codes),
Potentiometers, Switches,(SPDT, DPDT and DIP), Coils, Gang Condensers,
Relays, Bread Boards, PCBs
2. Identification, Specifications, Testing of Active Devices, Diodes , BJTs,
Low power JFETs , MOSFETs, Power Transistors, LEDs, LCDs , SCR ,
UJT
3. Study and operation of
Multimeters (Analog and Digital)
Function Generator
Regulated Power Supplies
CRO.
PART – B (For Laboratory Examinations – Minimum of 12 Experiments)
1. PN Junction diode characteristics A) Forward bias B) Reverse bias

2. Zener Diode Characteristics and Zener as Voltage Regulator
3. Full Wave Rectifier with & without filters
4. Input and output characteristics of BJT in CE Configuration
5. Input and output characteristics of FE in CS Configuration
6. Common Emitter Amplifier Characteristics
7. Common Base Amplifier Characteristics
8. Common Source amplifier Characteristics
9. Measurement of h-parameters of transistor in CB, CE, CC configurations
10. Switching characteristics of a transistor
11. SCR Characteristics.
12. Types of Clippers at different reference voltages
13. Types of Clampers at different reference voltages
14. The steady state output waveform of clampers for a square wave input
Electronic Devices and Circuits Lab EC306PC
II Year – I Semester
Cycle of Experiments
Introduction to EDC Lab Components and Devices
Electronic Workshop Practice (2 Lab Sessions)
Lab Session – 1
Introduction to various Electronic components like Resistor (Color Coding), Capacitor
(Determining the value of Capacitor), Inductor, Transistor (PNP and NPN), PN
Junction Diode, Zener Diode, FET (MOSFET and JFET), UJT, SCR, Connecting wires,
Bread Board, PCB‟s etc.
Lab Session – 2
Introduction to various Electronic Devices like Cathode Ray Oscilloscope, Function
Generator, Regulated Power Supply, Multimeter, Ammeter, Voltmeter (Measurement
of signal parameters like Amplitude, Time and Frequency on CRO)
Cycle – I (6 Lab Sessions)

1. PN Junction diode characteristics A) Forward bias B) Reverse bias
2. Zener Diode Characteristics and Zener as Voltage Regulator
3. Full Wave Rectifier with & without filters
4. Input and output characteristics of BJT in CE Configuration
5. Input and output characteristics of FE in CS Configuration
6. Common Emitter Amplifier Characteristics
Cycle – II (6 Lab Sessions)

1. Common Base Amplifier Characteristics
2. Common Source amplifier Characteristics
3. Measurement of h-parameters of transistor in CB, CE, CC configurations
4. Switching characteristics of a transistor
5. SCR Characteristics.
6. Types of Clippers at different reference voltages
7. Types of Clampers at different reference voltages
8. The steady state output waveform of clampers for a square wave input
Experiments using ADK (Analog Discovery Kit):

1. Half wave Rectifier with and without filters
2. Full wave Rectifier with and without filters
 Revision class – 2 sessions
 Internal Lab Exams – 2 sessions
Course Objectives
To study basic electronic components and observe their characteristics.
Course Outcomes (COs)

Lab course name: Electronic Devices and Circuits Lab EC306PC
After completion of this lab course, students will be able to
C217.1 Analyze the characteristics of different practical diodes.
C217.2 Construct electronic circuits for various applications using diodes.
C217.3 Analyze the characteristics of different Transistor configurations.
C217.4 Design amplifier circuits for a given specification.
CO – PO & PSO Mapping
Lab course name: Electronic Devices and Circuits Lab EC306PC

Course
Outcomes Program Outcomes (POs)
PO PO PO PO PO PO PO PO PO PO1 PO1 PO1 PSO PSO

1 2 3 4 5 6 7 8 9 0 1 2 1 2
C217.1 3 3 2 1 1 1 3 2 1 1
C217.2 3 3 3 2 1 1 3 2 1 1
C217.3 3 3 1 2 1 1 3 2 1
C217.4 3 3 3 2 1 1 3 2 1 1
3.0 3.0 2.2 1.7 1.0 1.0 3.0
Mean
0 0 5 5 0 0 0 2.00 1.00 1.00
DOs
 Be regular to the lab.

 Follow proper Dress Code.
 Maintain Silence.
 Know the theory behind the experiment before coming to the lab.
 Identify the different leads or terminals before making connection.
 Know the voltage required for different circuits and connect the power supply
voltage and ground terminals.
 Avoid unnecessary talking while doing the experiment.
 Insert components on the bread board properly.
 Keep the table clean.
 Take the signature of the in charge before taking the kit/components
 After the completion of the experiment switch off the power supply and return the
apparatus / Switch off the system properly
 Arrange the chairs/stools and equipment properly before leaving the lab.
DONTs
 Do not come late to the lab.
 Do not operate equipment unnecessarily.
 Do not exceed the voltage / current ratings.
 Avoid loose connections and short circuits.
INDEX
Experiment Observ Record Total Signature
Date of ation
Evaluation Marks Marks of Faculty
S.No Name of the Experiment Expt. Marks
(5M) (5M) (15 M) Member
(5M)
10
11
12
13
14
15
16
TOTAL
EDC Lab 1
WORKSHOP PRACTICE
AIM:
1. To identify the different Electronic components and its symbols.

2. To study the operation of Multimeter, Function generator, and
Regulated power supply(RPS) and Cathode ray oscilloscope (CRO)
APPARATUS:
1. Resistors
2. Capacitors
3. Inductors
4. Transformers
5. Diodes
6. Transistors
7. Multimeter
8. Function generator
9. Regulated power supply
10. Cathode ray oscilloscope
THEORY:
Resistors:
Opposition to flow of currents is called resistance. The elements having

resistance are called resistors. They are of two types
1. Fixed Resistor 2. Variable Resistor
Specifications of Resistors:
Resistance value: This is the value of the resistance expressed in ohms. Ex:
10Ω, 1MΩ
Tolerance: This is the variation in the value of the resistance i.e.

expected from exact indicated value usually tolerance is represented
in % ex: 1%, 2%, 5%,20%.
Power rating: The power rating is very important in the sense that it
determines the maximum current that a resistor can withstand without
being destroyed. The power rating of resistor is specified as so many
watts at a specific temperature.Ex:1/4 W,1/2 W,1W,2 watts at 70
degree.
Dept. of ECE, BVRIT HYDERABAD College of Engineering for Women

EDC Lab 2
Resistor symbols:
Capacitors:
A capacitor (originally known as condenser) is a passive two-terminal
electrical component used to store energy in an electric field. The forms
of practical capacitors vary widely, but all contain at least two electrical
conductors separated by a dielectric (insulator); for example, one
common construction consists of metal foils separated by a thin layer
of insulating film. Capacitors are widely used as parts of electrical
circuits in many common electrical devices. They are of three types
1. Disk capacitor
2. Fixed capacitor
3. Variable capacitor
Capacitor Symbols:
Capacitor Specifications:
When a capacitor is being discussed, it is referred to with certain
"specifications" or characteristics. Capacitors are usually "specified" in
the following manner-
 They are specified by type (tantalum, electrolytic, etc.)
 They are specified by package (axial, radial, as discussed
above).
 They are specified by how to connect to them, their

EDC Lab 3
connection type (such as "snap in" or leaded or

threaded screw holes, or surface mount).
 They are specified by capacitance value, e.g. in microfarads
(µF),nanofarads (nF)
Inductors: An inductor (also choke, coil, or reactor) is a passive two-
terminal electrical component that stores energy in its magnetic field.
For comparison, a capacitor stores energy in an electric field, and a
resistor does not store energy but rather dissipates energy as heat.
Any conductor has inductance. An inductor is typically made of a wire

or other conductor wound into a coil, to increase the magnetic field.
Inductor value:
The inductance is defined as the ability of an inductor which

opposes the change in current. It is denoted by the letter “L” and its
unit is Henry (H). Ex:1H.2H.4mH…
Inductor Symbol:
Transformers: A transformer is a static electrical device that transfers

energy by inductive coupling between its winding circuits. A varying current
in the primary winding creates a varying magnetic flux in the transformer's
core and thus a varying magnetic flux through the secondary winding. This
varying magnetic flux induces a varying electromotive force (emf) or voltage
in the secondary winding. They are of two types
1. Step up transformer
2. Step down transformer

EDC Lab 4
Transformer symbols:
Diodes:
In electronics, a diode is a two-terminal electronic component with an
asymmetric transfer characteristic, with low (ideally zero) resistance to
current flow in one direction, and high (ideally infinite) resistance
in the other. A semiconductor diode, the most common type today,
is a crystalline piece of semiconductor material with a p–n junction
connected to two electrical terminals. A vacuum tube diode is a
vacuum tube with two electrodes, a plate (anode) and heated cathode.
In this lab we will find the characteristics of
1. P-N junction diode
2. Zener diode
Diodes symbols:

EDC Lab 5
P N junction diode:
A pn junction is a boundary or interface between two types of
semiconductor material, p-type and n- type, inside a single crystal of
semiconductor. It is created by doping, for example by ion
implantation, diffusion of dopants, or by epitaxy (growing a layer of
crystal doped with one type of dopant on top of a layer of crystal doped
with another type of dopant). If two separate pieces of material were
used, this would introduce a grain boundary between the
semiconductors that severely inhibits its utility by scattering the
electrons and holes.
Zener Diode:
A Zener diode is a diode which allows current to flow in the forward
direction in the same manner as an ideal diode, but will also permit it
to flow in the reverse direction when the voltage is above a certain value
known as the breakdown voltage, "zener knee voltage", and zener
voltage “or” avalanche point. The device was named after Clarence
Zener, who discovered this electrical property. Many diodes described
as "zener" diodes rely instead on avalanche breakdown as the
mechanism. Both types are used. Common applications include
providing a reference voltage for voltage regulators, or to protect other
semiconductor devices from momentary voltage pulses.
Transistors:
A transistor is a semiconductor device used to amplify and switch
electronic signals and electrical power. It is composed of semiconductor
material with at least three terminals for connection to an
external circuit. A voltage or current applied to one pair of the
transistor's terminals changes the current through another pair of
terminals. Because the controlled (output) power can be higher than
the controlling (input) power, a transistor can amplify a signal. Today,
some transistors are packaged individually, but many more are found
embedded in integrated circuits. The term transistor was coined by
John R. Pierce as a portmanteau of the term "transfer resistor.
The transistor is the fundamental building block of modern electronic
devices, and is ubiquitous in modern electronic systems. Following its
development in the early 1950s, the transistor revolutionized the field
of electronics, and paved the way for smaller and cheaper radios,
calculators, and computers, among other things.

EDC Lab 6
Transistors types:
1. Bipolar Ex: Bipolar junction transistor
Transistor
2. Unipolar Ex: Field effect transistor, Uni junction
Transistor transistor
Bipolar junction transistor:
A bipolar junction transistor (BJT or bipolar transistor) is a type of

transistor that relies on the contact of two types of semiconductor for its
operation
Bipolar transistors are so named because their operation involves
both electrons and holes. These two kinds of charge carriers are
characteristic of the two kinds of doped semiconductor material
Charge flow in a BJT is due to bidirectional diffusion of charge carriers
across a junction between two regions of different charge
concentrations. The regions of a BJT are called emitter, collector, and
base. A BJT consists of three differently doped semiconductor regions,
the emitter region, the base region and the collector region. These
regions are, respectively, p type, n type and p type in a PNP transistor,
and n type, p type and n type in an NPN transistor. Each
semiconductor region is connected to a terminal, appropriately labeled:
emitter (E), base (B) and collector (C).
BJT Symbols:

EDC Lab 7
Unipolar Transistors:
Field Effect Transistor:
The field-effect transistor (FET) is a transistor that uses an electric

field to control the shape and hence the conductivity of a channel of
one type of charge carrier in a semiconductor material.
FETs can be majority-charge-carrier devices, in which the current is
carried predominantly by majority carriers, or minority-charge-carrier
devices, in which the current is mainly due to a flow of minority
carriers. The device consists of an active channel through which
charge carriers, electrons or holes, flow from the source to the drain.
Source and drain terminal conductors are connected to the
semiconductor through ohmic contacts. The conductivity of the
channel is a function of the potential applied across the gate and
source terminals.
The FET's three terminals are:
1. Source (S), through which the carriers enter the

channel. Conventionally, current entering the channel
at S is designated by IS.
2. Drain (D), through which the carriers leave the
channel. Conventionally, current entering the channel
at D is designated by ID. Drain to Source voltage is
VDS.
3. Gate (G), the terminal that modulates the channel
conductivity. By applying voltage to G, one can control
ID.
Types of FETs:
1. Junction FET (JFET)
 N-Channel JFET
 P-Channel JFET
2. Metal oxide semiconductor FET (MOSFET)
 Depletion MOSFET
 Enhancement MOSFET

EDC Lab 8
Breadboard:
A breadboard (or protoboard) is a construction base for prototyping of

electronics. The term "breadboard" is commonly used to refer to a
solderless breadboard (plugboard).
Because the solderless breadboard does not require soldering, it is
reusable. This makes it easy to use for creating temporary prototypes
and experimenting with circuit design. Older breadboard types did not
have this property. A stripboard (veroboard) and similar
prototypingprinted circuit boards, which are used to build permanent
soldered prototypes or one-offs, cannot easily be reused. A variety of
electronic systems may be prototyped by using breadboards, from
small analog and digital circuits to complete central processing
units(CPUs).

EDC Lab 9
Series connection:
Parallel connection:
Resistor color code:

EDC Lab 10
Resistor value calculation:
Regulated power supply:
A regulated power supply is an embedded circuit, or stand alone unit,

the function of which is to supply a stable voltage (or less often
current), to a circuit or device that must be operated within certain
power supply limits. The output from the regulated power supply may
be alternating or unidirectional, but is nearly always DC (Direct
Current) .
The type of stabilization used may be restricted to ensuring that the
output remains within certain limits under various load conditions, or
it may also include compensation for variations in its own supply
source. The latter is much more common today.
Function generator:
A function generator is usually a piece of electronic test equipment or
software used to generate different types of electrical waveforms over a
wide range of frequencies. Some of the most common waveforms
produced by the function generator are the sine, square, triangular and
sawtooth shapes. These waveforms can be either repetitive or single-

EDC Lab 11
shot (which requires an internal or external trigger source). Integrated

circuits used to generate waveforms may also be described as function
generator ICs.
Although function generators cover both audio and RF frequencies,
they are usually not suitable for applications that need low distortion
or stable frequency signals. When those traits are required, other signal
generators would be more appropriate.
Some function generators can be phase-locked to an external signal
source (which may be a frequency reference) or another function
generator.
Function generators are used in the development, test and repair of
electronic equipment. For example, they may be used as a signal
source to test amplifiers or to introduce an error signal into a control
loop.
Designation Specification
Waveform Sin, square and triangular
Amplitude 0-20V
Frequency range 0.1Hz to 1MHz
Offset Continuously variable 10V
Designation Specification
Output impedance 600ohms,5

%
Range selector is used to select the range of frequency

EDC Lab 12
Digital Multimeter:
A multimeter or a multitester, also known as a VOM (Volt-Ohm meter),
is an electronic measuring instrument that combines several
measurement functions in one unit. A typical multimeter would include
basic features such as the ability to measure voltage, current, and
resistance. Analog multimeters use a microammeter whose pointer
moves over a scale calibrated for all the different measurements that
can be made. Digital multimeters (DMM, DVOM) display the measured
value in numerals, and may also display a bar of a length proportional
to the quantity being measured. Digital multimeters have all but
replaced analog moving coil multimeters in most situations. Analog
multimeters are still manufactured but by few manufacturers.
Quantities measured:
 Contemporary multimeters can measure many quantities. The
common ones are: Voltage, alternating and direct, in volts.
 Current, alternating and direct, in amperes.

 The frequency range for which AC measurements are accurate
must be specified. Resistance in ohms.
 Additionally, some multimeters measure: Capacitance in Farads.
 Inductance in Henrys.
 Duty cycle as a percentage. Frequency in Hertz.
 Temperature in degrees Celsius or Fahrenheit, with an
appropriate temperature test probe, often a thermocouple.
 Digital multimeters may also include circuits for:
 Continuity tester; sounds when a circuit conducts
 Diodes (measuring forward drop of diode junctions), and
transistors (measuring current gain and other parameters)
 Battery checking for simple 1.5 volt and 9 volt batteries.
This is a current loaded voltage scale which simulates in-
use voltage measurement.

EDC Lab 13
Cathode Ray Oscilloscope:

An oscilloscope, previously called an oscillograph, and informally
known as a scope, CRO (for cathode-ray oscilloscope), or DSO (for the
more modern digital storage oscilloscope), is a type of electronic test
instrument that allows observation of constantly varying signal
voltages, usually as a two-dimensional graph of one or more electrical
potential differences using the vertical or y-axis, plotted as a function of
time (horizontal or x-axis). Many signals can be converted to voltages
and displayed this way. Signals are often periodic and repeat
constantly, so that multiple samples of a signal which is actually
varying with time are displayed as a steady picture. Many oscilloscopes
(storage oscilloscopes) can also capture non- repeating waveforms for a
specified time, and show a steady display of the captured segment.
Oscilloscopes are commonly used to observe the exact wave shape of an

electrical signal. Oscilloscopes are usually calibrated so that voltage
and time can be read as well as possible by the eye. This allows the
measurement of peak-to-peak voltage of a waveform, the frequency of
periodic signals, the time between pulses, the time taken for a signal to
rise to full amplitude (rise time), and relative timing of several related
signals.
Oscilloscopes are used in the sciences, medicine, engineering, and
telecommunications industry. General-purpose instruments are used
for maintenance of electronic equipment and laboratory work. Special-
purpose oscilloscopes may be used for such purposes as analyzing an
automotive ignition system, or to display the waveform of the heartbeat
as an electrocardiogram. Some computer sound software allows the

EDC Lab 14
sound being listened to be displayed on the screen as by an

oscilloscope.
Before the advent of digital electronics oscilloscopes used cathode ray
tubes as their display element (hence were commonly referred to as
CROs) and linear amplifiers for signal processing. More advanced
storage oscilloscopes used special storage CRTs to maintain a steady
display of a single brief signal. CROs were later largely superseded by
digital storage oscilloscopes (DSOs) with thin panel displays, fast
analog-to-digital converters and digital signal processors. DSOs without
integrated displays (sometimes known as digitisers) are available at
lower cost, and use a general-purpose digital computer to process and
display waveforms.
CRO:
The main parts are:
1. Electron gun: it is used to produce sharply focused
beam of electron accelerated to very high velocity.
2. Deflection system: it deflects the electron both in horizontal
and vertical plan.
3. Florescent screen: the screen which produces, spot of
visible light . when beam of electrons are incident on
it the other side of tube is coated with phosphorus
material.
FRONT PANEL:
ON-POWER: toggle switch for switching on power.
INTENCITY: controls trace intensity from zero to maximum.
FOCUS: It controls sharpness of trace a slight adugestement of focus
is done after changing intensity of trace.
AC-DC: GROUND:
It selects coupling of ACDC ground signal to vertical amplifier.
X-MAG: It expands length of time base from 15 times continuously
and to maximum time base to 40 ns/cm.
SQUARE: This provides square wave 2v (pP) amplitude and enables
to check y calibration of scope.
SAWTOOTH WAVE FORM: This provides saw tooth wave form output
coincident to sweep speed with an output of saw tooth wave (pp)
VERTICAL SECTION: y position:

EDC Lab 15
This enables movement of display along y-axis. Y-INPUT: It connects

input signal to vertical amplifier through ACDC ground coupling
switch
CALIBRATION: 15mv – 150mv dc signal depending on position
selection is applied to vertical amplifier.
DC BALANCE: It is control on panel electrostatic ally in accordance with
waveforms to be displayed. VOLTS/CM: Switch adjusts sensitivity.
HORIZANTAL SECTION:
X-POSITION: This control enables movement of display along xaxis.
TRIGGERING LEVEL: It selects mode of triggering.
TIMEBASE: This controls or selects sweep speeds.
VERNUIS: This control the fine adjustments associated with time base
sweep. SIGN SELECTOR: It selects different options of INT/EXT,
NORM/TO. STAB: Present on panel
EXITCAD: It allows time base range to be extended.
HORIZANTAL INPUT: It connects external signal to horizontal amplifier.
Ext SYN: it connects external signal to trigger circuit for
synchronization.
OBSERVATIONS:
Amplitude = no. of vertical divisions * Volts/div.
Time period = no. of horizontal divisions * Time/div.
Frequency = 1/T
Amplitude taken on vertical section (y).
Time period taken on horizontal section(x)

EDC Lab 16
CIRCUIT DIAGRAMS: PN Junction diode characteristics:
Forward Bias Characteristics:
Reverse Bias Characteristics:
Forward and Reverse Characteristic curves:

EDC Lab 17
Experiment-1
PN JUNCTION DIODE CHARCTERISTICS
AIM: 1. To Plot the volt-Ampere Characteristics of PN Junction diode under
forward and reverse bias conditions.
2. To find the following parameters from the Forward & Reverse
characteristics.
a) Cut in voltage-Vb) Static forward resistance RF at If=20mA
c) Reverse saturation current-Ico d) Dynamic forward resistance-rf
e) Dynamic reverse resistance-Rr
APPARATUS REQUIRED:
1. Diodes Ge-DR25 / Si-1N4007 : 1No

2. Resistor 1kΩ : 1 No
3. 0-200 mA DC Ammeter : 1 No
4. 0-200 μA DC Ammeter : 1 No
5. 0-20 V DC Voltmeter : 1 No
6. 0-30 V Regulated Power Supply : 1 No
7. Bread Board : 1 No
8. Connecting Wires : 1 Set
THEORY:
Forward Bias:
Under forward bias configuration the positive terminal of the battery is

connected to P-side and negative terminal of the battery is connected to N-
side as shown in the figure above. Large amount of the current flows
through the junction under this condition.
When P-N junction is forward biased, the holes are repelled from the positive
electrode and the electrons from the negative electrode of the power supply,
and are forced to move towards the junction. Some of the holes and
electrons in the depletion region recombine themselves. This reduces the
width of the depletion layer and the height of the potential barrier. As a
result of this more number of majority charge carriers flow through the P-N
junction.
Reverse bias:
In the reverse bias positive electrode of the battery is connected to N-side

and the negative electrode to P-side. When a P-N junction is reverse biased,
the holes in the P region are attracted towards the negative electrode of the
battery and the electrons in the N region are attracted towards the positive
electrode.

EDC Lab 18
.TABULAR FORM-1:
S.No RPS Si-1N4007 Ge-DR-25

Voltage(V) Forward Forward Forward Forward
voltage (Vf) current (If) voltage (Vf) current (If)
in volts in mA. in volts in mA.
1 0 .
2 0.2
3 0.4
4 0.6
5 0.8
6 1
7 2
8 3
9 4
10 5
11 6
12 7
13 8
14 9
15 10

EDC Lab 19
Thus the majority carriers are drawn away from the junction. This widens
the depletion layer and increases the height of the potential barrier. Hence
there is no current flow due to majority carriers under reverse bias. A small
amount of current due to diffusion of minority charge carriers across the
junction flows through the reversed biased PN junction. Generation of the
minority carriers is dependent upon the ambient temperature and is
independent of the applied reverse voltage.
PROCEDURE:
1. Ensure that D.C Power supply is switched OFF. Keep the voltage
control knob in the minimum position and current control knob in
maximum position.
2. Connect the circuit as shown in Fig –1 for forward characteristics
making use of silicon diode.
3. Vary the power supply voltage such that the voltage across the diode
is varied 0-1V in steps of 0.1 volts .Note down Vf and If in the table.
4. Draw the Vf Vs If characteristics and find out the cut – in voltage Vr
for diode from it. Ensure that the current through the diode does not
exceed 50mA.
5. Repeat the experiment using germanium diode.
6. Present the results at the end of the experiment.
7. Estimate the forward resistance of the diode from the relation=
[Δ Vf / Δ If ].
1. Connect the circuit as shown in Fig-2 for reverse bias

characteristics making use of a silicon diode.
2. Vary the voltage across the diode from 0-20 volts in steps of 1V
and record the reverse saturation current in µA.
3. Draw the reverse characteristics Vr Vs Ir .
4. Find out the reverse saturation current Ir. Estimate the reverse
resistance Rr from the Characteristic curve from the relation
Rr = [Δ Vr / Δ Ir]
5. Repeat the experiment using germanium diode.

EDC Lab 20
TABULAR FORM-2:
S.No RPS Si-1N4007 Ge-DR-25

Voltage(V) Reverse Reverse Reverse Reverse
voltage (Vr) current (Ir) voltage (Vr) current (Ir)
in volts in µA. in volts in µA.
1 1 .
2 2
3 3
4 4
5 5
6 6
7 7
8 8
9 9
10 10
11 11
12 12
13 13
14 14
15 15

EDC Lab 21
RESULT: The parameters of the Silicon and Germanium diodes are

estimated from the static forward and reverse characteristics and are
presented below.
Experimentally observed Silicon Germanium

Parameters
Cut-in voltage –V V V
Rf Ohms Ohms
Rr KΩ KΩ
PRECAUTIONS:
1. Connections must be done very carefully.

2. Switch-on the power only after thorough checking of all the
connections.
3. The applied voltage, current should not exceed the maximum
rating of the diode & given meters range.
DISCUSSIONS:
1. What are the cut-in voltages for the two diodes used? Give reasons
why they are different?
2. What is meant by forward and reverse bias?
3. Name the applications of the diodes.
4. What is meant by depletion layer or intrinsic / Space charge region
5. What is meant by recombination?
6. Write examples of N type & P type materials?
7. What is reverse Saturation Current?.

EDC Lab 22
CIRCUIT DIAGRAMS:
Characteristics of a Zener Diode under Reverse Bias:
MODEL GRAPH: Forward and Reverse Characteristics:

EDC Lab 23
Experiment-2a
ZENER DIODE CHARACTERISTICS
AIM: To Plot the volt-Ampere Characteristics of a Zener diode.
APPARATUS REQUIRED:
1. D.C regulated power supply(0-30 V) :1 No

2. Zener diode 5.1 V /6.5 V :1 No
3. Resistor 1kΩ :1 No
4. DC ammeter (0-200 mA) :1 No
5. DC Volt meters (0-20V) :1 No
6. Bread board :1 No
7. Connecting wires :1 set
THEORY:
The Zener diode is a Silicon PN junction device. It is operated in the reverse

breakdown region. When a reverse voltage across a diode is increased a
critical voltage called a breakdown voltage is reached at which the reverse
current increases rapidly. The reverse breakdown of a PN junction may
occur either due to Avalanche breakdown effect or Zener breakdown effect or
both.
PROCEDURE:
1. Connect the circuit as per the Diagram shown in Fig –1

2. Ensure that the power supply is switched OFF. Keep the voltage
maximum position.
3. Vary the power supply such that the increment in the input voltage,
Vi is 1V. Record the corresponding values of Vz voltage across the
Zener Diode and Iz current through the Zener as shown in Table-I. Do
not exceed the Zener current Iz more than the 50 mA.
4. Plot V – I characteristics of Zener diode in reverse bias region as
shown in Fig.2 Identify the Zener break down voltage Vz.
5. Calculate the resistance of the Zener diode in the linear part of the
breakdown region with the help of the formula Rz = [Δ Vz / Δ Iz ]

EDC Lab 24
TABULAR FORM-1:
V – I Characteristics of Zener diode under Reverse Bias:
S.No RPS Voltage Reverse Voltage Reverse current

(Volts) Vr (volts) Ir (mA)
1. 0
2. 0.5
3. 1
4. 2
5. 3
6. 4
7. 5
8. 6
9. 7
10. 8
11. 9
12. 10
13. 11
14. 12
15. 13
16. 14

EDC Lab 25
RESULTS:
1. Zener breakdown voltage Vz =
2. Zener resistance in the breakdown region Rz =
PRECAUTIONS:
1. Connections must be done very carefully.

connections.
3. The applied voltage, current should not exceed the maximum rating of
given meters range.
DISCUSSIONS:
1. Name the applications of Zener diodes?

2. Explain Zener effect and avalanche effect?
3. Why zener diode characteristics are taken in reverse bias.

EDC Lab 26
CIRCUIT DIAGRAM:
Zener as Voltage Regulator:
TABULAR FORM-1:
Voltage Regulator Load Regulation:
No load voltage Vnl measured at IL=0 =
S.No Load Load Zener Total Load %

Resistance Current Current Current Voltage Regulati
(RL) in Ohms IL(mA) IZ(mA) IT(mA) VL (volts) on
MODEL GRAPH:

EDC Lab 27
Experiment-2b
ZENER AS VOLTAGE REGULATOR
AIM: To study the load regulation of Zener diode.
APPARATUS REQUIRED:
1. D.C regulated power supply(0-30 V) :1 No

2. Zener diode 5.1 V /6.5 V :1 No
3. Resistor 1kΩ :1 No
4. DC ammeter (0-200 mA) :2 No‟s
5. DC Volt meters (0-20V) :1 No
6. Decade Resistance Box (DRB) as RL – 1 No.
7. Bread board :1 No
8. Connecting wires :1 set
THEORY:
Zener diode is used as a Voltage Regulator. The source voltage Vi and
resistor Rs are selected so that initially the diode is operating in the
breakdown region. Here the diode voltage, which is also the voltage across
the load RL is VZ and the diode current is IZ. The diode will now regulate
the load voltage against variations in load currents and against variations in
supply voltage Vi because in the breakdown region large changes in diode
current produce only small changes in diode voltage.
Moreover, it maintains a constant voltage across its terminals over a
specified range of Zener current values.
PROCEDURE:
Load Regulation:
1. Connect the circuit as per the Diagram shown in Fig – 1.
2. Ensure that the power supply is switched OFF. Keep the voltage
maximum position.
3. Adjust the input voltage Vi such that it is greater than the Zener
breakdown voltage by about 10Volts and fix the same.
4. Open the load resistance circuit and note the no-load voltage VnL
corresponding to IL= 0 (zero load current).
5. Now connect RL (DRB) as shown in circuit diagram then vary it such
that load current IL increases from minimum to a maximum of 50 ma
in steps of about 5 mA. Note down the Load resistance (RL),output
voltage(Vo), Load current(IL) and Zener current(IZ) record them as
shown in Table-I
6. Draw the Graph between IL and VL.
7. Calculate the % Regulation with the help of the following relation.
% Regulation =[ (VnL – VL) / VnL ] x 100 = --------------------
8. Draw the graph between IL and % regulation.
RESULT: Studied and plotted the load and line regulation of Zener diode.

EDC Lab 28
CIRCUIT DIAGRAMS: Full Wave Rectifier with and without filters.
MODEL WAVE FORMS:

EDC Lab 29
Experiment-3
FULLWAVE RECTIFIER - WITH & WITHOUT FILTERS
AIM: To rectify the signal and then to find ripple factor and percentage of
regulation in full wave rectifier with and without filters.
APPARATUS REQUIRED:
1. Transformer 230 V/12 V-0-12 V : 1No
2. Diodes IN 4007 : 2No‟s
3. Capacitor 470µf/35V : 1No
4. Decade Resistance Box : 1No
5. Digital Multi meter : 1No
6. DC Digital Ammeters, 0-100 mA : 1No
7. Bread Board : 1No.
8. 30 MHz Dual Trace CRO : 1No.
9. Connecting wires : 1set
THEORY:
Generally, the rectifier is required to produce pure dc supply for using at
various places in electronic circuits. However the output of a rectifier has
pulsating character i.e., it contains ac & dc components. The ac component
is undesirable and must be kept away from load, to do so a filter circuit is
used, which removes (or) filters out ac component that reach the load.
A filter circuit is a device, which removes (or) filters out ac component
of rectifier output but allow the dc component to reach the load. Obviously a
filter circuit should be installed between the rectifier and load as shown.
Generally, it is a combination of an inductor (L) and a capacitor (C). The
filter in action of „L‟ and „C‟ depends upon the basic electrical properties. A
Capacitor passes ac easily but does not pass dc. At ac on the other hand an
inductor opposes ac but allows dc to pass through it.
It then becomes clear that suitable network of „L‟ and „C‟ can
effectively remove the ac component and allows the dc component to reach
the load.
Capacitor filter: It consists of a capacitor „C‟, placed across the rectifier
output, i.e., load RL.As the direction of voltage of the rectifier increases, it
charges the capacitors and also supplies current to the load. At the end of
quarter cycle the capacitor is charged to peak value Vm of the rectifier. Now
the rectifier output starts to decrease as the capacitor discharges through
the load and voltage across it i.e., across parallel combination of RL
decreases. The voltage across the load will decrease only slightly because
immediately the next voltage peak comes and recharge the capacitor. This is
repeated again and again and the output of rectifier waveform becomes
straight. It is commonly used in transistor radio – battery eliminators.

EDC Lab 30
TABULAR FORM-1:
Full wave Rectifier without Filter:
No load Voltage (VDC) =
Load IDC VAC VDC Ripple % of Regulation
S. No. Resistance (mA) (V) (V) factor
𝑉noload − 𝑉𝑓𝑢𝑙𝑙𝑙𝑜𝑎𝑑
In Ω γ= VAC / = x 100
VDC 𝑉𝑓𝑢𝑙𝑙 𝑙𝑜𝑎𝑑
1 100
2 300
3 500
4 1k
5 2k
6 3k
7 4k
8 5k
TABULAR FORM-2:
Full wave Rectifier with Capacitor Filter:
No load Voltage (VDC) =
Load IDC VAC VDC Ripple % of Regulation
Resistance (mA) (V) factor
S. No. (V)
In Ω γ= VAC / 𝑉noload − 𝑉𝑓𝑢𝑙𝑙𝑙𝑜𝑎𝑑
= x 100
VDC 𝑉𝑓𝑢𝑙𝑙 𝑙𝑜𝑎𝑑
1 100
2 300
3 500
4 700
5 900
6 1k
7 2k
8 3k
9 4k
10 5k

EDC Lab 31
PROCEDURE:
Full Wave Rectifier without filter:

1. Connect the circuit on the bread board as per the circuit diagram
shown in fig-1.
2. Connect the primary of the transformer to mains supply i.e., 230 V,
50 HZ.
3. Connect Decade Resistance Box (DRB) and set the RL value to 100 Ω.
4. Connect Multi meter at output terminals and vary the load resistance
in Decade Resistance Box from 100 Ω to 5 kΩ and note down the Vac
Vdc and IDC values in the given tabular form-1.
5. Disconnect load resistance (DRB) and note down No Load voltage Vdc.
6. Connect load resistance at 5 kΩ and connect Channel -II of CRO at
output terminals and Channel -I of CRO at secondary terminals of the
transformer observe and note down the Input and output wave forms
and its voltages.
7. Calculate ripple factor = V rms of ac/Vdc.
𝑽 𝒏𝒐𝒍𝒐𝒂𝒅−𝑽 𝒇𝒖𝒍𝒍 𝒍𝒐𝒂𝒅

8. Calculate percentage of regulation = 𝑋 100%
𝑽 𝒇𝒖𝒍𝒍 𝒍𝒐𝒂𝒅
9. Draw the wave forms on Graph sheet.
Full Wave Rectifier with Capacitor filter:
1. Connect the circuit on the bread board as per the circuit diagram
shown in fig-2.
2. Connect the primary of the transformer to mains supply i.e., 230 V,
50 Hz.
3. Connect decade resistance box and set the RL value to 100 Ω.
4. Connect Multi meter at output terminals and vary the load resistance
in Decade Resistance Box from 100 Ω to 5 kΩ and note down the Vac,
Vdc and IDC in the given tabular form-2.
5. Disconnect load resistance (DRB) and note down No Load voltage Vdc.
6. Connect load resistance at 100 Ω and connect Channel-II of CRO at
output terminals and Channel -I of CRO at secondary terminals of the
transformer observe and note down the Input and output wave forms
and its voltages.
7. Calculate ripple factor = Vrms of ac/Vdc.
𝑽 𝒏𝒐𝒍𝒐𝒂𝒅−𝑽 𝒇𝒖𝒍𝒍 𝒍𝒐𝒂𝒅

8. Calculate percentage of regulation = 𝑋 100%
𝑽 𝒇𝒖𝒍𝒍 𝒍𝒐𝒂𝒅
9. Draw the wave forms on Graph sheet.

EDC Lab 32
OBSERVATIONS IN CRO:
1. Input signal time period (t) = _________ & frequency (f) = 1/t ______ at
transformer secondary terminals.
2. Input signal peak to peak voltage for full wave rectifier at transformer
secondary terminals = ________
3. Output signal time period (t) = _________ & frequency (f) = 1/t ______ at
rectifier output for without filter.
4. Output signal peak voltage for without filter = ________
5. Output signal voltage for capacitor filter = ________

EDC Lab 33
RESULT: Rectified the signal, calculated the ripple factor and percentage of
regulation for with and without filters of full wave rectifier.
DISCUSSIONS:
1. Which type of filter is recommended for small loads?

2. Which type of filter is recommended for large loads?
3. In which filter circuit, ripple factor is independent of loads?
4. What are the PIVs of diodes used in full-wave rectifiers, when used
with C-filter?

EDC Lab 34
CIRCUIT DIAGRAM: Common Emitter Transistor Characteristics.
MODEL GRAPH:

EDC Lab 35
Experiment-4
INPUT AND OUPUT CHARACTERISTICS OF A BJT IN CE
CONFIGURATION
AIM: To plot the input and output characteristics of a Transistor connected
in Common Emitter configuration and to find the h-parameters from the
characteristics.
APPARATUS REQUIRED:-
1. Transistor CL 100 /BC 107 : 1 No

2. Resistor 1kΩ,100 kΩ : 1 No. each
3. DC Digital Ammeters 0-100 mA, 0-200 µA : 1 No each
4. Digital Multi meter : 1 No
5. Dual channel DC Regulated power supply 0-30 V: 1No
6. Bread board : 1 No
7. Connecting wires : 1 set
THEORY:
CE Input Characteristics:
These curves give the relationship between the base current (IB) and the
base to emitter voltage (VBE) for a constant collector to emitter voltage
(VCE). As the collector to emitter voltage is increased above 1V, the curves
shifts downwards because as VCE is increased, the depletion width in the
base region increases and this reduces the effective base width, which in
turn reduces the base current.
PROCEDURE:
1. Connect the circuit as shown in the circuit diagram.

2. Keep VBB and VCC in zero volts before giving the supply.
3. Set VCE = 0 volt by varying VCC in channel-2 power supply.
4. Slowly Vary the VBB smoothly with fine control in channel-1 power
supply and note the values of IB in 0-200 µA digital ammeter and VBE
in Volt meter by increasing the VBE in steps of 0.1V from zero and note
down the corresponding IB for each step in the tabular form-1.
5. Now decrease the voltage in channel-1 power supply.
6. Repeat the experiment for VCE =4 volts.
7. Draw a graph between VBE Vs IB against VCE = Constant

EDC Lab 36
TABULAR FORM -1(CE Input Characteristics):
VCE = 0V Constant VCE =4 V Constant

VBE (V) IB (µA) VBE (V) IB (µA)
0.0 0.0
0.1 0.1
0.2 0.2
0.3 0.3
0.4 0.4
0.5 0.5
0.6 0.6
TABULAR FORM-2 (CE Output Characteristics):
IB = 10 µA Constant IB = 20 µA Constant
VCE (V) IC (mA) VCE (V) IC (mA)
0 0
1 1
2 2
3 3
4 4
5 5
6 6
7 7
8 8

EDC Lab 37
THEORY:
CE Output Characteristics:
Output characteristic gives the relationship between the collector to emitter
voltage (VCE) and collector current(IC) for a constant base current (IB) The
curves may be divided into three important regions namely Saturation
region Active region and Cut-off region.
PROCEDURE:
1. Connect the circuit as shown in circuit diagram.

3. Set the IB = 10 μA by using VBB in channel-1 power supply.
4. Slowly vary the 0-15V DC supply in channel-2 and note the values of
VCE in in digital Volt meter and collector current IC in 0-100 mA digital
ammeter by increasing the VCE in steps of 1 volt from zero up to
8 volts and note down the corresponding IC for each step in tabular
form-2.
6. Repeat the experiment for IB=20μA and tabulate the readings.
7. Draw a graph between VCE Vs IC against IB = Constant.
RESULTS: The input and output characteristics of a Transistor connected

in Common Emitter configuration are drawn on the graphs.
PRECAUTIONS:
1. Connections must be given very carefully.

Connections.
3. The applied voltage, current should not exceed given in the circuit,
maximum ratings of the transistor & given meters range.
DISCUSSIONS:
1. Indicate the various regions, (Active region, Saturation region and cut
off region) on the output characteristics of the transistor.
2. What are the differences between common emitter and common base
input and output characteristics?

EDC Lab 38
CIRCUIT DIAGRAM: Drain and Transfer Characteristics of Field Effect

Transistor.
MODEL GRAPHS:

EDC Lab 39
Experiment-5
CHARACTERISTICS OF FET IN CS CONFIGURATION
AIM: To study and plot the drain characteristics and Transfer
Characteristics of Field Effect Transistor in common source configuration.
APPARATUS REQUIRED:
1. FET BFW 11 : 1 No
2. Resistors 470Ω,1KΩ : 1 No each
3. DC Digital Ammeter 0-20 mA : 1 No
THEORY:
Like an ordinary junction transistor, a field effect transistor is also a three
terminal device. It is a unipolar device, because its function depends only up
on one type of carrier. (The ordinary transistor is bipolar, hence it is called
bipolar-junction transistor) Unlike a BJT, a FET has high input impedance.
This is a great advantage.
A field effect transistor can be either a JFET or MOSFET. Again a JFET can
either have N-channel or P-channel. An N-channel JFET has an N type
semiconductor bar. The two ends of which the drain and source terminals
on the two sides of this bar, PN junctions are made. These P regions make
gates. Usually, these two gates are connected together to form a single gate.
The gate is given a negative bias with respect to the source. The drain is
given positive potential with respect to the source. In case of a P channel
JFET, the terminals of all the batteries are reversed.
In this case, PN junction is reversing biased and hence the thickness of the
depletion region increases. As VGS is decreased from zero, drain is positive
with respect to the source with VGS = 0.Now the majority carriers flow
through the N–channel from source to drain. Therefore the conventional
current flows from drain to source. Since the current is controlled by only
majority carriers, FET is called as a unipolar device.
The drain current ID is controlled by the electric field that extends into the
channel due to reverse biased voltage applied to the gate. The drain current
depends on the drain voltage VDS and the gate voltage VGS. Any of these
variables may be fixed and the relation between the other two are
determined when VDS = VP, ID becomes maximum. When VDS is increased
beyond VP, the length of the pinch – off region or saturation region
increases.
The important parameters of a JFET are defined below.
1. Drain dynamic resistance, rd =Δ VDS / ID at VGS = constant.
2. Mutual conductance = gm = Δ ID / ΔVGS at VDS = constant.
3. Amplification factor = µ = gm / rd = Δ VDS/Δ VGS at ID = constant.

EDC Lab 40
TABULAR FORM-1:
FET Drain (output) Characteristics:
VGS = 0 V Constant VGS = – 0.5 V Constant VGS = – 1 V Constant
VDS (V) ID (mA) VDS (V) ID (mA) VDS (V) ID (mA)
0 0 0
1 1 1
2 2 2
3 3 3
4 4 4
5 5 5
6 6 6
7 7 7
8 8 8

EDC Lab 41
PROCEDURE:
FET Drain (output) Characteristics:
2. Make VGS= 0 V by adjusting 0-5 V (Channel-I) power supply.
3. Adjust the 0-15 V (Channel-II) power supply and note the values of ID
and VDS with the variation of VDS in steps of 1V and note down in the
given tabular form-1.
4. Repeat the above procedure for VGS = -0.5 V and -1 V.
5. Plot the output characteristics by taking ID on Y-axis and VDS on
X-axis for constant values of VGS.
6. Calculate the drain resistance rd from the graph in the linear
region of the characteristics by
rd = [V ds /Id] at V gs = constant.
FET Transfer Characteristics:

2. Make VDS =1 V by adjusting 0-15 V (Channel-II) power supply.
3. Adjust the 0-5 V (Channel-I) power supply and note the values of ID
and VGS with the variation of VGS in steps of 0.2 V and note down in
the given tabular form-2.
4. Repeat the above procedure for VDS = 2 V.
5. Plot the Transfer characteristics by taking ID on Y-axis and VGS on
X-axis for constant values of VDS.
6. Calculate the Trans-conductance (gm) from the graph in the linear
region of the characteristics.
g m = [Id/V gs] at V ds = constant.

EDC Lab 42
TABULAR FORM-2:
FET Transfer Characteristics:
VDS = 1 V Constant VDS = 2 V Constant
VGS (V) ID (mA) VGS (V) ID (mA)
0 0
-0.2 -0.2
-0.4 -0.4
-0.6 -0.6
-0.8 -0.8
-1.0 -1.0
-1.2 -1.2
-1.4 -1.4
-1.6 -1.6
-1.8 -1.8
-2.0 -2.0

EDC Lab 43
RESULT: The output and Transfer Characteristics of Field Effect transistor

in common source configuration are drawn on the graphs and the following
parameters are calculated.
1. Drain resistance rd =
2. Tran conductance gm =
3. Amplification factor  = rd . gm
DISCUSSIONS:
1. What is the difference between FET and BJT?

2. FET is unipolar or bipolar?
3. Draw the symbol of FET?
4. What are the applications of FET?
5. FET is voltage controlled or current controlled?
6. What is the voltage gain of the FET amplifier?
7. What is the input impedance of FET amplifier?
8. What is the output impedance of FET amplifier?
10. What are the FET parameters?
11. What are the FET applications?

EDC Lab 44
CIRCUIT DIAGRAM: Transistor CE Amplifier.
MODEL GRAPH:

EDC Lab 45
Experiment-6
COMMON EMITTER AMPLIFIER CHARACTERISTICS
AIM: To measure the voltage gain and plot the frequency response of
Transistor CE amplifier.
APPARATUS REQUIRED:
1. Transistor BC 107 (Si) : 1 No.
2. Capacitors 10 µF : 3 Nos.
3. Resistors 1 kΩ : 2 Nos.
2.2 kΩ, 10kΩ, 33kΩ : 1 No each
4. 30 MHz Cathode Ray Oscilloscope : 1 No.
5. DC Regulated power supply 0-30V : 1 No.
6. Function generator : 1 No.
7. Bread board : 1 No.
THEORY:
Common Emitter amplifier has the emitter terminal as the common terminal
between input and output. The emitter base junction is forward biased and
collector base junction is reverse biased, so that transistor remains in active
region throughout the operation. When a sinusoidal AC signal is applied at
input terminals of circuit during positive half cycle the forward bias of base
emitter junction VBE is increased resulting in an increase in IB, The
collector current IC is increased by β times the increase in IB, VCE is
correspondingly decreased. i.e., output voltage gets decreased. Thus in a CE
amplifier a positive going signal is converted into a negative going output
signal i.e., 180o phase shift is introduced between output and input signal
and it is an amplified version of input signal.
Characteristics of CE amplifier:
1. Large current gain (AI)

2. Large voltage gain (AV)
3. Large power gain (AP=AI.AV)
4. Phase shift of 180 degrees.
5. Moderate input & output impedances.
The voltage gain of the amplifier is given by

Gain = AV=20log⁡Vo ⁄ Vi
Where, Vo is the output voltage. Vi is input voltage of applied AC signal.

EDC Lab 46
TABULAR FORM:
Vin=50 mV Constant.
Input Output Gain in dB

S.No frequency(Hz) Voltage(Vo) Gain Av=Vo/Vi =20logAv
in Volts.
1 100
2 200
3 300
4 400
5 500
6 600
7 700
8 800
9 900
10 1k
11 2k
12 5k
13 8k
14 10k
15 20k
16 50k
17 100k
18 200k
19 300k
20 400k
21 500k
22 600k
23 700k
24 800k
25 900k
26 1M
OBSERVATIONS:
Maximum gain in dB (AV max) = ----------------
Maximum Voltage gain ( Av max )
3dB Gain= = ----------------
√2
Lower half power frequency (f1) = ----------------
Upper half power frequency (f2) = ----------------
Band width (B.W) = (f2 – f1) = ----------------
Gain bandwidth product = AV (B.W) = ----------------

EDC Lab 47
PROCEDURE:
1. Connect the circuit on the bread board as shown in the circuit

diagram.
2. Connect the function generator output to input terminals of the
circuit and Channel – I of dual trace CRO.
3. Connect the output terminal of the circuit to Channel – II of the dual
trace CRO.
4. Switch ON the 0 -30V DC regulated power supply, set the voltage to
12V and connect to the circuit.
5. Switch ON the function generator, select sine function and amplitude
50 mV peak to peak constant and fed it to the circuit.
6 Vary the frequency in function generator according to values given in
the tabular form and measure the corresponding Output Voltage in
channel-II of CRO.
7 Tabulate the readings in the tabular form.
8 Calculate the Maximum voltage gain (AV) , Lower half power frequency
(f1), Upper half power frequency (f2), Band width (B.W), Gain
bandwidth product in the observations.
GRAPH: Draw the graph frequency verses gain (dB) on a semi log graph
sheet.
RESULT: Obtained the frequency response of Transistor Common

Emitter amplifier and measured the maximum voltage gain, Lower half
power frequency, Upper half power frequency, Band width (B.W) and Gain
bandwidth product.
DISCUSSIONS:
1. What are the characteristics of CE amplifier?
2. What is the main application of CE amplifier?
3. What is meant by Bandwidth of an amplifier?
4. Find the phase relation between input and output.
5. What is an Amplifier?
6. How many types of an Amplifiers?
7. What is meant Band width, Lower cut-off and Upper cut-off
frequency?
8. How much phase shift for CE Amplifier?
9. What are the applications?
10. Draw the Equivalent circuit for low frequencies?

EDC Lab 48
CIRCUIT DIAGRAM: Transistor CB amplifier.
MODEL GRAPH:

EDC Lab 49
Experiment-7
COMMON BASE AMPLIFIER CHARACTERISTICS
AIM: To measure the voltage gain and plot the frequency response of
Transistor CB amplifier.
APPARATUS REQUIRED:
2. Capacitors 10 µF : 2 Nos.
3. Resistors 220Ω, 470 Ω, 10kΩ, 22kΩ : 1 No each
5. DC dual Regulated power supply 0-30V : 1 No.
THEORY:
In Common Base Amplifier Circuit Base terminal is common to both the
input and output terminals. In this Circuit input is applied between emitter
and base and the output is taken from collector and the base. As we know,
the emitter current is greater than any other current in the transistor, being
the sum of base and collector currents i.e. IE= IB+ IC In the CE and CC
amplifier configurations, the signal source was connected to the base lead of
the transistor, thus handling the least current possible. Because the input
current exceeds all other currents in the circuit, including the output
current, the current gain of this amplifier is actually less than 1 (notice how
R load is connected to the collector, thus carrying slightly less current than
the signal source). In other words, it attenuates current rather than
amplifying it. With common-emitter and common-collector amplifier
configurations, the transistor parameter most closely associated with gain
was β. In the common-base circuit, we follow another basic transistor
parameter: the ratio between collector current and emitter current, which is
a fraction always less than 1. This fractional value for any transistor is
called the alpha ratio, or α ratio.( α= IC/IE) Since it obviously can't boost
signal current, it only seems reasonable to expect it to boost signal voltage.
Common Base Amplifier Characteristics:
1. Voltage gain : High

2. Current gain : Low
3. Power gain : Low
4. Input / output phase relationship : 0°
5. Input resistance : Low
6. Output resistance : High

EDC Lab 50
TABULAR FORM: Vin=50 mV Constant
Input
S.No frequency(Hz) Output Voltage(Vo) Gain Av=Vo/Vi Gain in dB
In volts =20logAv
1 50
2 100
3 200
4 300
5 400
6 500
7 600
8 700
9 800
10 900
11 1k
12 2k
13 5k
14 8k
15 10k
16 20k
17 50k
18 100k
19 200k
20 300k
21 400k
22 500k
23 600k
24 700k
25 800k
26 900k
27 1M
OBSERVATIONS:
3dB Gain= = ----------------
√2
Band width (B.W) = (f2 – f1) = ----------------

EDC Lab 51
PROCEDURE:

diagram.
2. Connect the function generator output to input terminals of the circuit
and Channel – I of dual trace CRO.
3. Connect the output terminal of the circuit to Channel – II of the dual
trace CRO.
4. Switch ON the 0 -30V DC regulated power supply, Set the VCC 12V in
channel-1 and VEE 12V in channel-2 and connect to the circuit.
5. Switch ON the function generator, select the sine function and
amplitude at 50 mV peak to peak constant and fed it to the circuit.
6. Vary the frequency in function generator according to values given in
channel-II of CRO.
7. Tabulate the readings in the tabular form.
8. Calculate the Maximum voltage gain (AV), Lower half power frequency
(f1), Upper half power frequency (f2), Band width (B.W), Gain bandwidth
product in the observations.
sheet.
RESULT: Obtained the frequency response of Transistor Common

base amplifier and measured the maximum voltage gain, Lower half power
frequency, Upper half power frequency, Band width (B.W) and Gain
bandwidth product.
DISCUSSIONS:
1. What are the characteristics of CB amplifier?
2. What is the main application of CB amplifier?
3. What is meant by Bandwidth of an amplifier?
4. Find the phase relation between input and output.

EDC Lab 52
CIRCUIT DIAGRAM: Common Source FET amplifier.
MODEL GRAPH:

EDC Lab 53
Experiment-8
COMMON SOURCE FET AMPLIFIER CHARACTERISTICS
AIM: To obtain the frequency response of common source FET amplifier.
APPARATUS REQUIRED:
1. FET BF245 : 1 No
2. Capacitors: 0.1 µF : 2 Nos.
47 µF : 1 No.
3. Resistors: 1.5 kΩ,4.7 kΩ,1MΩ : 1 No each
5. DC Regulated power supply 0-30V : 1 No.
THEORY:
The FET amplifier uses n-channel field effect transistor. Unlike a

bipolar transistor, the input impedance of FET is very high and it works like
a vacuum pentode. The combination RS, CS provides self-bias. RG provides
DC path for reverse biasing of gate source junction. RD is the load resistance
of the amplifier. Typical values of components are shown in the figure. From
the drain and transfer characteristics of FET, the drain current of FET is a
function of drain to source voltage and gate to source voltage. The linear
small signal equivalent circuit for FET can be drawn analogous to the BJT. A
low frequency model for FET has a Norton‟s output circuit with a dependent
current generator whose magnitude is proportional to gate to source voltage.
The proportionality constant is the Trans conductance. The output

resistance rd, the input resistance between gate and source is infinite, since
it is assumed that the reverse biased gate draws no current. A low frequency
model for FET has a dependent current generator whose magnitude is
proportional to the gate to source voltage.

EDC Lab 54
TABULAR FORM:
Input Voltage Vin = 50 mV Constant.
Output
Input Gain Gain in dB
S. No. Voltage
Frequency (Hz) AV=Vo/Vi 20 log Av
(V)
1 50
2 100
3 200
4 500
5 1k
6 5k
7 10 k
8 20 k
9 30 k
10 40 k
11 50 k
12 60 k
13 70 k
14 80 k
15 90 k
16 100 k
17 200 k
18 300 k
19 400 k
20 500 k
21 1M
OBSERVATIONS:
3dB Gain= = ----------------
√2
Band width (B.W) = (f2 – f1) = ----------------

EDC Lab 55
Common Source FET Amplifier Characteristics:
1. Voltage gain : Medium

2. Current gain : Medium
3. Power gain : High
4. Input / output phase relationship : 180°
5. Input resistance : Medium
6. Output resistance : Medium
PROCEDURE:

2. Connect the function generator output to input terminals of the
circuit and Channel-I of dual trace CRO.
3. Connect the output terminal of the circuit to Channel-II of the dual
trace CRO.
4. Switch ON the 0 -30V DC regulated power supply, Set the VDD 12V in
channel-1 and connect to the circuit.
5. Switch ON the function generator, select the sine function and
amplitude at 50 mV peak to peak constant and fed it to the circuit.
6. Vary the frequency in function generator according to values given in
channel-II of CRO.
7. Tabulate the readings in the tabular form.
8. Calculate the Maximum voltage gain (AV) , Lower half power frequency
(f1), Upper half power frequency (f2), Band width (B.W), Gain
bandwidth product in the observations.
sheet.
RESULT: Obtained the frequency response of Common Source

FET amplifier and measured the maximum voltage gain, Lower half power
frequency, Upper half power frequency, Band width (B.W) and Gain
bandwidth product.
DISCUSSIONS:
1. What are the advantages of JFET over BJT?
2. Why input resistance in FET amplifier is more than BJT amplifier
3. What is a Uni-polar Device?
4. What is Pinch off Voltage?
5. What are the various FETs?
6. What is Enhancement mode and depletion mode?

EDC Lab 56
CIRCUIT DIAGRAM: Common Base Transistor Characteristics.
MODEL GRAPH:

EDC Lab 57
Experiment-9
MEASUREMENT OF h-PARAMETERS OF TRANSISTOR IN
CB,CE,CC CONFIGURATIONS
in Common Base configuration and to find the h-parameters from the
characteristics.
APPARATUS REQUIRED:-
1. Transistor CL 100/BC107 : 1 No
2. Resistor 1kΩ : 2 Nos
3. DC Digital Ammeters, 0-100 mA : 2 Nos
5. Dual channel DC Regulated power supply 0-30 V : 1No
THEORY:
In common base configuration, the base is common to both input and

output. The Base–Emitter junction is forward biased and base
collector junction is reverse biased .The input characteristic are plotted
between IE and VEB keeping the voltage VCB constant. This characteristic is
very similar to that of a forward biased diode. The input dynamic resistance
is calculated using the formula
ri = Δ VBE / Δ IE at constant VCB.
The output characteristics are plotted between IC and VCB

keeping IE constant. These curves are almost horizontal. The output
dynamic resistance is given by
ro = ΔVCB / Δ IC at constant IE.
At a given operating point, current gain can be defined as follows

Current gain β= Δ IC/ Δ IE at constant VCB.

EDC Lab 58
TABULAR FORM-1 (CB Input Characteristics):
VCB = 0 Volts Constant VCB =4 Volts Constant

VEB (V) IE (mA) VEB (V) I E (mA)
0.0 0.0
0.1 0.1
0.2 0.2
0.3 0.3
0.4 0.4
0.5 0.5
0.6 0.6
0.7 0.7
TABULAR FORM-2 (CB Output Characteristics):
IE = 2mA Constant IE = 4mA Constant

VCB (V) IC (mA) VCB (V) IC (mA)
0 0
1 1
2 2
3 3
4 4
5 5
6 6
7 7
8 8

EDC Lab 59
PROCEDURE:
CB Input Characteristics:

2. Keep VEE and VCC in zero volts before giving the supply.
3. Make VCB to 0 Volts constant in channel-2 power supply.
4. Slowly vary the 0-15 volts DC supply in channel-1 and note the values
of IE in 0-100 mA digital ammeter and VEB in Volt meter by increasing
the VEB in steps of 0.1V from zero and note down the corresponding
IE for each step in the tabular form-1.
6. Repeat the experiment for VCB=4V constant.
7. Draw a graph between VEB Vs IE against VCB =Constant.
CB Output Characteristics:

2. Keep VEE and VCC in zero volts before giving the supply.
3. Set the IE = 2mA by using VEE in channel-1power supply.
VCB in digital Volt meter and collector current IC in 0-100 mA digital
ammeter by increasing the VCB in steps of 1 volts from zero up to
8 volts and note down the corresponding IC for each step in tabular
form-2.
6. Repeat the experiment for IE=4mA and tabulate the readings.
7. Draw a graph between VCB Vs IC against IE = Constant.

EDC Lab 60
To find the h-Parameters:
a) CB Input Characteristics:
To obtain input resistance, find VBE and IE for a constant VCB on
one of the input characteristics.
Input impedance hib = ri = Δ VEB / Δ IE at VCB constant
Reverse Voltage gain hrb = Δ VEB / Δ VCB at IE constant
b) CB Output Characteristics:
To obtain output admittance find IC and VCB at a constant IE on
one of the output characteristics.
Output admittance hob = IC / VCB at IE constant.
Forward current gain = hfb = IC / IE at VCB constant

EDC Lab 61
RESULT: The Input and Output characteristics of transistor connected in

Common Base configuration are drawn on the graphs and the following
h- Parameters are calculated from the graph.
hib = --------- ohms. hrb = -----------
hob = -------- mhos. hfb = ----------
PRECAUTIONS:

Connections.
DISCUSSIONS:
1. What is collector current equation in CB configuration.

2. What are the applications of transistor.

EDC Lab 62
CIRCUIT DIAGRAM: Common Emitter Transistor Characteristics.
MODEL GRAPH:

EDC Lab 63

in Common Emitter configuration and to find the h-parameters from the
characteristics.
APPARATUS REQUIRED:
1. Transistor CL 100 /BC107 : 1 No

2. Resistor 1kΩ,100 kΩ : 1 No. each
3. DC Digital Ammeters 0-100 mA, 0-200 µA : 1 No each
THEORY:
In common emitter configuration the emitter is common to both input and

output. For normal operation the Base-Emitter junction is forward biased
and base-collector junction is reveres biased .The input characteristics are
plotted between IB and VBE keeping the voltage VCE constant. This
characteristic is very similar to that of a forward biased diode. The input
dynamic resistance is calculated using
ri = Δ VBE / Δ IB at constant VCE.
The output characteristics are plotted between IC and VCE keeping IB

constant. These curves are almost horizontal. The output dynamic
resistance is given by,
ro = ΔVCE / Δ IC at constant IB.
At a given operating point, we define DC and AC current gains (beta) as

follows
Current gain β= Δ IC/ Δ IB at constant VCE.

EDC Lab 64
TABULAR FORM -1(CE Input Characteristics):
VCE = 0V Constant VCE =4 V Constant

VBE (V) IB (µA) VBE (V) IB (µA)
0.0 0.0
0.1 0.1
0.2 0.2
0.3 0.3
0.4 0.4
0.5 0.5
0.6 0.6
TABULAR FORM-2 (CE Output Characteristics):
IB = 10 µA Constant IB = 20 µA Constant
VCE (V) IC (mA) VCE (V) IC (mA)
0 0
1 1
2 2
3 3
4 4
5 5
6 6
7 7
8 8

EDC Lab 65
PROCEDURE:

3. Set VCE = 0 volt by varying VCC in channel-2 power supply.
4. Slowly Vary the VBB smoothly with fine control in channel-1 power
supply and note the values of IB in 0-200 µA digital ammeter and VBE
in Volt meter by increasing the VBE in steps of 0.1V from zero and note
down the corresponding IB for each step in the tabular form-1.
6. Repeat the experiment for VCE =4 volts.
7. Draw a graph between VBE Vs IB against VCE = Constant

3. Set the IB = 10 μA by using VBB in channel-1 power supply.
VCE in in digital Volt meter and collector current IC in 0-100 mA digital
ammeter by increasing the VCE in steps of 1 volt from zero up to
5. volts and note down the corresponding IC for each step in tabular
form-2.
7. Repeat the experiment for IB=20μA and tabulate the readings.
8. Draw a graph between VCE Vs IC against IB = Constant.

EDC Lab 66
To find the h Parameters:
a) CE Input Characteristics:
To obtain input resistance, find VBE and IB for a constant VCE on
one of the input characteristics.
Input impedance hie = ri = Δ VBE / Δ IB at VCE constant
Reverse Voltage gain hre = Δ VBE / Δ VCE at IB constant
b) CE Output Characteristics:
To obtain output admittance find IC and VCE at a constant IB on
one of the output characteristics.
Output admittance hoe = IC / VCE at IB constant.
Forward current gain = hfe = IC / IB at VCE constant

EDC Lab 67
RESULTS: The input and output characteristics of a Transistor connected

in Common Emitter configuration are drawn on the graphs and the following
h-Parameters are calculated.
hie = --------- ohms. hre = -----------
hoe = -------- mhos. hfe = -----------
PRECAUTIONS:

Connections.
DISCUSSIONS:
1. What is the range of β for the transistor?

2. What are the input and output impedances of CE configuration?
3. Identify various regions in the output characteristics.
4. What is the relation between α and β?
5. Define current gain in CE configuration.
6. Why CE configuration is preferred for amplification?
7. What is the phase relation between input and output?
8. What is the power gain of CE configuration?
9. What are the applications of CE configuration?

EDC Lab 68
CIRCUIT DIAGRAM: Switching Characteristics of a transistor:
MODEL GRAPH & WAVE FORMS:

EDC Lab 69
Experiment-10
SWITCHING CHARACTERISTICS OF A TRANSISTOR
AIM: To design a switch using transistor and study the Switching
characteristics of a transistor.
APPARATUS REQUIRED:

2. Resistor 5.6 kΩ,10 kΩ : 1 No each.
3. Regulated DC power supply : 1 No
4. Function Generator : 1 No
5. 30 MHZ Cathode ray oscilloscope : 1 No
6. Digital multimeter : 1 No
THEORY:
A transistor may be operated as an electronic switch. In the switch mode
operation the transistor functions as a SPST (Single pole single through)
switch. The level of the control signal on the base terminal of a transistor
turns it ON and OFF. Turning ON means making the resistant between the
collector and emitter to zero i.e. to operate the transistor in its saturation
region. Transistor OFF means making the resistor in its cut-off region.
When emitter-base and collector-base are reverse biased, the transistor
operates in cutoff region and acts as an open switch. Then the transistor is
OFF. When the emitter-base is forward biased and collector-base is reversed
biased, it is in active region and acts as an amplifier. When emitter-base and
collector-base are forward biased, the transistor operates in saturation
region and acts as a closed switch. Then the transistor is ON.
Device ratings:
IC (max) = 0 – 20 max Vcc = 12v
Design Equations:
Select IC (sat) = 2mA, VCE(sat) = 0.3v
RC = (VCC - VCE ) / IC (sat) , RC = (12-0.3) /2ma = 5.8K
Select proper value Vi (5V) and IB= 0.5ma for which the transistor IB is > IC
(sat) RB = ( Vi - VBE ) / IB RB = ( 5-0.7) / 0.5 = 8.6K.
select higher value as 10K By selecting RB = 10K
Design for IC(Sat) = 0.35mA. Calculate RC and RB
RB = 10KΩ, RC = 5.8KΩ

EDC Lab 70
OBSERVATIONS:
TABULAR FORM-1: DC Voltage Input:
S.No DC Input Voltage(V) DC Output Voltage
1 0
2 0.1
3 0.2
4 0.3
5 0.4
6 0.5
7 0.6
8 0.7
9 0.8
10 0.9
11 1.0
12 1.1
13 1.2
14 1.3
15 1.4
16 1.5
Vi < 0.5v Transistor in OFF condition

If Vi=0v Transistor is indeed in OFF condition
Vi > 1.2 v Transistor in ON condition
If Vi=5v Transistor is indeed in ON condition
TABULAR FORM-2: AC Voltage Input:

S.No Parameter Amplitude(V) Time Frequency Phase
period(t) F=1/t shift
1 Square wave
input
2 Square wave
output(≈Vcc)
3 Phase Shift ----- ----- ------
4 Vce sat ----- ------ -----

EDC Lab 71
PROCEDURE: DC Voltage Input:

1. Connect the circuit on the bread board as shown in fig-1 and apply
VCC from channel-I of dual channel regulated DC power supply.
2. Connect channe-2 DC power supply to the input terminals of the
circuit .
3. Make sure minimize the voltage controls of the both channels of the
DC power supply.
4. Switch ON the DC power supply and set Vcc 12V in channel-1.
5. Slowly vary the channel-2 DC power supply fine control
knob(potentiometer) from 0V to 1.5V insteps of 0.1V and note down
the corresponding output voltage in the given tabular form-1.
6. Draw the graph input voltage Vs output voltage as shown in fig-3.
PROCEDURE: AC Voltage Input:
1. Connect the circuit on the bread board as shown in fig-1 and apply
VCC 12V from channel-I of dual channel regulated DC power supply.
2. Disconnect channe-2 DC power supply from the input terminals of the
circuit.
3. Take function generator and set 5V P-P square wave at 1KHz
frequency, connect to input terminals of the circuit and channel-1 of
Dual channel CRO.
4. Connect circuit output terminals to the channel-2 of Dual channel
CRO.
5. Note down the output voltage, phase shift and Vce sat in the given
tabular form-2.
6. Draw the input and output wave forms on the graph sheet as shown
in fig-4.
RESULT: From the above experiment it has been observed that the
transistor acts as a switch if it is operated in saturation and cut off region.
This Transistor switch operation is equivalent to an inverter gate.
PRECAUTIONS:
1. Ensure that the connections are made without any loose contact.
2. Care should be taken while biasing the circuit.
DISCUSSIONS:
1. Differentiate between diode and transistor as a switch.
2. Define ON time, OFF time of a transistor.
3. In which regions transistor acts as a switch?

EDC Lab 72
CIRCUIT DIAGRAM: SCR Characteristics:
MODEL GRAPH:
PIN CONFIGURATION OF SCR TYN 612:

EDC Lab 73
Experiment-11
SCR CHARACTERISTICS
AIM: To find the latching current and holding current of a given SCR and to
Plot the V-I Characteristics of the Silicon Controlled Rectifier.
APPARATUS REQUIRED:
1. SCR TYN 612 :1No
2. Resistors 1kΩ,1Watt :2No‟s
3. Ammeters 0-20mA,0-100mA :1No Each
4. Voltmeter 0-30V :1No
5. 0-30V Dual channel power supply :1No
6. Bread board :1No
7. Connecting wires :1set
THEORY:
The silicon control rectifier (SCR) consists of four layers of semiconductors,
which form NPNP or PNPN structures have three P-N junctions labeled J1,
J2 and J3, and three terminals. The anode terminal of an SCR is connected
to the p-type material of a PNPN structure, and the cathode terminal is
connected to the n-type layer, while the gate of the SCR is connected to the
p-type material nearest to the cathode.
Today, the term "thyristor" applies to the larger family of multilayer
devices that exhibit bistable state-change behaviour, that is, switching
either on or off.
The operation of an SCR and other thyristors can be understood in
terms of a pair of tightly coupled bipolar junction transistors, arranged to
cause the self-latching action.
There are three modes of operation for an SCR depending upon the biasing
given to it.
1. Forward blocking mode (off state)
2. Forward conduction mode (on state)
3. Reverse blocking mode (off state)
SCRs are mainly used in devices where the control of high power, ossibly
coupled with high voltage, is demanded. Their operation makes them
suitable for use in medium- to high-voltage AC power control applications,
such as lamp dimming, power regulators and motor control.
SCRs and similar devices are used for rectification of high-power AC in high-
voltage direct-current power transmission. They are also used in the control
of welding machines, mainly MTAW (metal tungsten arc welding) and GTAW
(gas tungsten arc welding) processes similar.

EDC Lab 74
TABULAR FORM:
Firing Current IG=
S.No VAK(volts) IA(mA)

1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
OBSERVATIONS:
S.No Parameters Practical readings

1 Break over voltage (VBO)
2 Latching current (IL)
3 Holding current (IH)
4 Maximum current

EDC Lab 75
PROCEDURE:
1. Connect the circuit as per the circuit diagram.

2. Set gate current IG equal to firing current in Channel-I regulated
power supply, vary Anode to Cathode voltage VAK in Channel-2
regulated power supply and carefully observe the voltmeter reading.
3. VBO is the point where SCR voltage (VAK) suddenly drops and sudden
increase anode current IA.
4. Note down the current at that point is called latching current.
5. Increase the anode to cathode supply till it is maximum, i.e. 30V in
Channel-2 regulated power supply and note the maximum value of
current read in the ammeter.
6. Now open the gate terminal and decrease the anode to cathode voltage
VAK (Channel-2 regulated power supply).
7. By decreasing VAK slowly at one point the deflection of the ammeter
suddenly reduces to zero. Note down that point is called holding
current.
GRAPH: Plot the graph between VAK and IA at IG.
RESULT: Observed the latching current and holding current of a given SCR
and Plotted the V-I Characteristics.
DISCUSSIONS:
1. What is an SCR?
2. What is the difference between SCR and TRIAC?
3. What are the applications of SCR?
4. Why is Peak Reverse Voltage Important?

EDC Lab 76
CIRCUIT DIAGRAMS: Types of Clippers at different reference Voltages:
Positive peak clipper:
Model wave forms and Transfer characteristics:
Theoretical calculations:
Positive peak clipper with reference voltage, V=2V, Vr=2V, Vγ=0.6V
When the diode is forward biased Vo =Vr+ Vγ ; =2V+0.6V = 2.6V.
When the diode is reverse biased then Vo =Vi.
Practical output_______
Positive Base Clipper:

EDC Lab 77
Experiment-12
TYPES OF CLIPPERS AT DIFFERENT REFERENCE VOLTAGES
AIM: To study the various Clipper circuits and also observe transfer
characteristics.
APPARATUS REQUIRED:
1. Diode 1N4007 (Si) : 2 No‟s

2. Resistor 1 KΩ : 1 No.
THEORY:
The clipping circuit may be defined as a circuit that limits the amplitude of
voltage by removing the signal above or below the reference voltage, either
+Ve side or -Ve side or both sides of the waveform may be clipped. Clipping
circuits are also known as voltage or current limiters. The diode clipper
circuits are classified according to the placement of the diode in the circuit,
as a series diode clipper or shunt diode clipper.
SHUNT DIODE CLIPPERS: WITH POSITIVE BIAS CLIPPERS:

Assuming the diode used is ideal the shunt diode clipper with +Ve bias is
shown in the figure. The diode is forward biased only when 𝑉𝑖 > 𝑉𝑟 as the
cathode is at the potential of 𝑉𝑟 . To make the diode forward bias the
potential at the cathode must be greater than 𝑉𝑟 . During the +Ve half cycle
𝑉𝑖 > 𝑉𝑟 the diode acts as a short circuit and output voltage is equal to the
reference voltage 𝑉𝑟 . When 𝑉𝑖 < 𝑉𝑟 the diode is reverse biased and total input
voltage 𝑉𝑖 appears across the open circuit output terminals as shown in
figure.
WITH NEGATIVE BIAS CLIPPERS:
Assuming the diode used is an ideal in the shunt clippers with –Ve bias is
shown in the figure. The diode is forward bias during -Ve half cycle when
𝑉𝑖 < 𝑉𝑟 during this period diode acts as a short circuit and the output voltage
equals to the reference voltage 𝑉𝑟 . During complete +Ve half cycle as well as
during -Ve half cycle when 𝑉𝑖 > 𝑉𝑟 the diode is reverse biased and it acts as
an open circuit. Therefore 𝑉𝑖 appears across open circuit terminals of the
output circuit.
DOUBLE DIODE CLIPPERS:
This type of clippers is to clip at two independent levels. Diode 𝐷1 conducts
during +Ve half cycle when 𝑉𝑖 > 𝑉𝑟 .where as diode 𝐷2 conducts during the –
Ve half cycle when𝑉𝑖 > 𝑉𝑟 . When both diodes are not conducting output
follows the input.

EDC Lab 78
Positive Base Clipper with Reference Voltage Vr=2V, Vγ=0.6V.
When the diode is forward biased Vo=Vr –Vγ = 2V-0.6V = 1.4V.
When the diode is reverse biased then Vo =Vi.
Negative peak clipper:

EDC Lab 79
Negative peak clipper with reference voltage, Vr=-2V, Vγ=0.6V
When the diode is forward biased Vo= -(Vr+ Vγ) = -(2+0.6)V =-2.6V.
When the diode is reverse biased Vo=Vi
Negative Base clipper:.
Negative Base Clipper with Reference Voltage, Vr =-2V, Vγ=0.6V.
When the diode is forward biased Vo = -Vr+ Vγ =-2V+0.6V =-1.4V.
When the diode is reverse biased Vo=Vi.

EDC Lab 80
Slicer (Clipping at two independent levels):
When the diode D1 is forward biased and D2 is reverse biased Vo= Vr+ Vγ
=2.6V.
When the diode D2 is forward biased and D1 is reverse biased Vo=-(Vr+ Vγ)
= -(2+0.6)v= -2.6V. When the diodes D1 &D2 are reverse biased Vo=Vi.
OBSERVATIONS: TABULAR FORM:
Name of the circuit Theoretical value(V) Practical(V)
Positive Peak clipper With Bias Vo =Vr+Vγ ; =2V+0.6V = 2.6V.

Positive Base clipper With Bias Vo=Vr –Vγ = 2V-0.6V = 1.4V.
Negative Peak clipper With Bias Vo= -(Vr+ Vγ) = - (2+0.6)V =-2.6V.
Negative Base clipper With Bias Vo = -Vr+ Vγ = -2V+0.6V =-1.4V.

Slicer(Both peak clipper) Vo= Vr+ Vγ =2.6V
Vo=-(Vr+ Vγ) = -2.6V

EDC Lab 81
PROCEDURE:

diagram.
2. Switch ON the DC power supply and set the reference voltage to 2 V
and connect it to the circuit.
3. Apply input signal sine wave at 1 kHz 8 𝑉𝑝−𝑝 from the
function generator and connect to the circuit and channel - I of CRO.
4. Keep the channel –2 of CRO AC/DC push button switch in DC mode.
5. Observe the output waveforms in channel – 2 of the CRO.
6. Measure the clipping levels in the output waveform and compare them
with the theoretical value.
7. Note down all observations in the given tabular form.
8. Press XY mode (i.e. Disconnecting the Time base from X–plates) &
Observe transfer Characteristics.
9. Sketch the waveforms on a graph sheet.
RESULT: Studied various Clipper circuits and observed its transfer

characteristics.
PRECAUTIONS:
DISCUSSIONS:
1. Define clipping.
2. Define peak inverse voltage of diode.
3. Explain the clipping process.

EDC Lab 82
CIRCUIT DIAGRAMS: Types of Clampers at different reference Voltages:

Positive peak clamping to 0 Volts:
Positive peak clamping to Vr=2V:
Negative peak clamping to 0 Volts:

EDC Lab 83
Experiment-13
TYPES OF CLAMPERS AT DIFFERENT REFERENCE
VOLTAGES
AIM: To Study various biased and unbiased clamper circuits & verify the
clamping Circuit theorem.
APPARATUS REQUIRED:
1. Diode 1N4007 (Si) : 1 No
2. Resistor 1 KΩ : 1 No.
3. Capacitor 100µf/16V : 1 No
THEORY:
Clamping circuits are circuits, which are used to clamp or fix the extremity
of a periodic waveform to some constant reference level. Clamping circuits
may be one way clamps or two way clamps.
The clamping circuits only change the DC level of the input signal. It does
not affect its shape. Clamping circuits may be positive voltage clamping
circuits or negative voltage clamping circuits. In positive clamping, the
negative extremity of the waveform is at the reference level and the entire
wave form appears above the reference level. i.e. the output wave form is
positively clamped with reference to the reference level. In negative clamping
the positive extremity of the waveform is appears below the reference
voltage. i.e., the output waveform is negatively clamped with reference to
the reference level.
The capacitors are essential in the clamping circuits. The difference between
the clipping and clamping circuits is that while the clipper clips off an
unwanted portion of the input waveform, the clamper simply clamps the
maximum positive or negative peak of the waveform to a desired level.

EDC Lab 84
Negaitive peak clamping to Vr=2V:
OBSERVATIONS:
TABULAR FORM:
Name of the circuit Theoretical value(V) Practical value(V)
Positive clamper circuit

without bias (VR=0V).
Positive clamper circuit with

bias (VR=2V).
Negative clamper circuit

Negative clamper circuit with

bias (VR=2V).

EDC Lab 85
PROCEDURE:

diagram.
2. Switch ON the DC power supply and set the reference voltage to
2 V and connect it to the circuit for biasing circuits.
3. Apply input signal sine wave at 1 kHz 8 𝑉𝑝−𝑝 from the
function generator and connect to the circuit and channel - I of
CRO.
4. Keep the channel – 2 of CRO AC/DC push button switch in DC
mode.
6. Measure the clamping levels in the output waveform and compare
them with the theoretical value.
RESULT: Studied various Clamper circuits and observed its Wave forms.
PRECAUTIONS:
DISCUSSIONS:
1. Define clamping.
2. What are the other names for the clamper?
3. What are the applications of clampers?

EDC Lab 86
CIRCUIT DIAGRAMS: Steady state output wave forms of a different

clamper circuits for square wave input.
OBSERVATIONS:
TABULAR FORM:
Name of the circuit Theoretical value(V) Practical value(V)
Negative clamper circuit -VR+Vγ =

Positive clamper circuit

VR-Vγ =
Negative clamper circuit with

-VR+Vγ =
bias (VR=2V).
Positive clamper circuit with

VR-Vγ =
bias (VR=2V).

EDC Lab 87
Experiment-14
STEADY STATE OUTPUT WAVEFORM OF CLAMPERS FOR
SQUARE WAVE INPUT
AIM: To study the steady state output wave forms of a different clamper
circuits for square wave input.
APPARATUS REQUIRED:
1. Diode 1N4007 (Si) : 1 No
2. Resistor 1 MΩ : 1 No.
3. Capacitor 0.1µf/100V : 1 No
THEORY:
Clamping circuits are circuits, which are used to clamp or fix the extremity
of a periodic waveform to some constant reference level. Clamping circuits
may be one way clamps or two way clamps.
The clamping circuits only change the DC level of the input signal. It does
not affect its shape. Clamping circuits may be positive voltage clamping
circuits or negative voltage clamping circuits. In positive clamping, the
negative extremity of the waveform is at the reference level and the entire
wave form appears above the reference level. i.e. the output wave form is
positively clamped with reference to the reference level. In negative clamping
the positive extremity of the waveform is appears below the reference
voltage. i.e., the output waveform is negatively clamped with reference to
the reference level.
The capacitors are essential in the clamping circuits. The difference between
the clipping and clamping circuits is that while the clipper clips off an
unwanted portion of the input waveform, the clamper simply clamps the
maximum positive or negative peak of the waveform to a desired level.

EDC Lab 88
MODEL WAVE FORMS:

EDC Lab 89
PROCEDURE:
1. Connect the circuit on the bread board as per the circuit diagram.
2. Switch ON the DC power supply and set the reference voltage to
2 V and connect it to the circuit for biasing circuits.
3. Apply input signal square wave at 1 kHz 10 𝑉𝑝−𝑝 from the
function generator and connect to the circuit and channel - I of CRO.
4. Keep the channel – 2 of CRO AC/DC push button switch in DC mode.
6. Measure the clamping levels in the output waveform and compare
them with the theoretical value.
RESULT: studied the steady state output wave forms of a different clamper
circuits for square wave input.
PRECAUTIONS:
DISCUSSIONS:
1. Define clamping.
2. What are the other names for the clamper?
3. What are the applications of clampers?

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Department of Electronics and Communication Engineering

BVRIT HYDERABAD College of Engineering for Women

Lab Course Code : EC306PC

Year and Semester : II Year I Semester

R. Swathi Reddy A. Radha

College Vision and Mission

 To achieve academic excellence through innovative learning practices.

 To enhance intellectual ability and technical competency for a successful career.

 To encourage research and innovation.

Vision and Mission of the Department

To emerge as a centre of academic and research excellence in Electronics and Communication

 PEO-1: Excel in contemporary problem solving in Electronics and Communication

Program Specific Outcomes (PSOs)

The graduates of this program will be able to

Electronic Devices and Circuits Lab EC306PC

PART- A: (Only for Viva-voce Examinations)

PART – B (For Laboratory Examinations – Minimum of 12 Experiments)

1. PN Junction diode characteristics A) Forward bias B) Reverse bias

Introduction to EDC Lab Components and Devices

Electronic Workshop Practice (2 Lab Sessions)

Cycle – I (6 Lab Sessions)

Cycle – II (6 Lab Sessions)

Experiments using ADK (Analog Discovery Kit):

Course Outcomes (COs)

CO – PO & PSO Mapping

Lab course name: Electronic Devices and Circuits Lab EC306PC

PO PO PO PO PO PO PO PO PO PO1 PO1 PO1 PSO PSO

 Be regular to the lab.

1. To identify the different Electronic components and its symbols.

Opposition to flow of currents is called resistance. The elements having

Tolerance: This is the variation in the value of the resistance i.e.

Dept. of ECE, BVRIT HYDERABAD College of Engineering for Women

Dept. of ECE, BVRIT HYDERABAD College of Engineering for Women

connection type (such as "snap in" or leaded or

Any conductor has inductance. An inductor is typically made of a wire

The inductance is defined as the ability of an inductor which

Transformers: A transformer is a static electrical device that transfers

Dept. of ECE, BVRIT HYDERABAD College of Engineering for Women

Dept. of ECE, BVRIT HYDERABAD College of Engineering for Women

Dept. of ECE, BVRIT HYDERABAD College of Engineering for Women

Bipolar junction transistor:

A bipolar junction transistor (BJT or bipolar transistor) is a type of

Dept. of ECE, BVRIT HYDERABAD College of Engineering for Women

Field Effect Transistor:

The field-effect transistor (FET) is a transistor that uses an electric

The FET's three terminals are:

1. Source (S), through which the carriers enter the

1. Junction FET (JFET)

2. Metal oxide semiconductor FET (MOSFET)

Dept. of ECE, BVRIT HYDERABAD College of Engineering for Women

A breadboard (or protoboard) is a construction base for prototyping of

Dept. of ECE, BVRIT HYDERABAD College of Engineering for Women

Resistor color code:

Dept. of ECE, BVRIT HYDERABAD College of Engineering for Women

Resistor value calculation:

Regulated power supply:

A regulated power supply is an embedded circuit, or stand alone unit,

Dept. of ECE, BVRIT HYDERABAD College of Engineering for Women

shot (which requires an internal or external trigger source). Integrated

Waveform Sin, square and triangular