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Bu 2508 Ax

This document provides information on the BU2508AX silicon NPN power transistor from isc. It is designed for use in horizontal deflection circuits of color TV receivers. Key specifications include a collector-emitter sustaining voltage of 700V minimum, high switching speed, and minimum lot-to-lot variations for robust performance. Absolute maximum ratings include 1500V collector-emitter voltage, 700V collector-emitter operating voltage, and 45W maximum power dissipation.

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0% found this document useful (0 votes)
55 views

Bu 2508 Ax

This document provides information on the BU2508AX silicon NPN power transistor from isc. It is designed for use in horizontal deflection circuits of color TV receivers. Key specifications include a collector-emitter sustaining voltage of 700V minimum, high switching speed, and minimum lot-to-lot variations for robust performance. Absolute maximum ratings include 1500V collector-emitter voltage, 700V collector-emitter operating voltage, and 45W maximum power dissipation.

Uploaded by

AinulWafi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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isc Silicon NPN Power Transistor BU2508AX

DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min)
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Designed for use in horizontal deflection circuits of
color TV receivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCES Collector- Emitter Voltage(VBE= 0) 1500 V

VCEO Collector-Emitter Voltage 700 V

VEBO Emitter-Base Voltage 7.5 V

IC Collector Current- Continuous 8 A

ICM Collector Current-Peak 15 A

IB Base Current- Continuous 4 A

IBM Base Current-Peak 6 A

Collector Power Dissipation


PC 45 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W

isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark


isc Silicon NPN Power Transistor BU2508AX

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0, L= 25mH 700 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.12A 1.0 V

VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 1.7A 1.1 V

VCE= 1500V; VBE= 0 1.0


ICES Collector Cutoff Current mA
VCE= 1500V; VBE= 0; TC=125℃ 2.0

IEBO Emitter Cutoff Current VEB= 7.5V; IC= 0 1.0 mA

hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V 13

hFE-2 DC Current Gain IC= 4.5A ; VCE= 1V 4

COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 80 pF

NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark

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