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The isc Silicon NPN Power Transistor S2530A is designed for high voltage applications with a maximum collector-emitter voltage of 450V and a collector current of 10A, making it suitable for large screen color deflection circuits. It features robust performance with minimal lot-to-lot variations and a maximum power dissipation of 100W. The datasheet includes absolute maximum ratings and electrical characteristics, along with a notice regarding the intended use and limitations of the product.

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The isc Silicon NPN Power Transistor S2530A is designed for high voltage applications with a maximum collector-emitter voltage of 450V and a collector current of 10A, making it suitable for large screen color deflection circuits. It features robust performance with minimal lot-to-lot variations and a maximum power dissipation of 100W. The datasheet includes absolute maximum ratings and electrical characteristics, along with a notice regarding the intended use and limitations of the product.

Uploaded by

infinitylink1068
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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isc Silicon NPN Power Transistor S2530A

DESCRIPTION
·High Voltage-VCEX= 450V(Min.)
·Collector Current- IC = 10A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Designed for use in large screen color deflection circuits .

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Emitter Voltage 1000 V

VCEO Collector-Emitter Voltage 450 V

VEBO Emitter-Base Voltage 5 V

ICM Collector Current-Peak 10 A

Collector Power Dissipation


PC 100 W
@TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature -55~150 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


isc Silicon NPN Power Transistor S2530A

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 450 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.0 V

ICEO Collector Cutoff Current VCE= 400V; VBE= 0 1 mA

IEBO Emitter Cutoff Current VEB= 5.0V; IC= 0 100 uA

IcBO Collector Cutoff Baset VCB= 1000V; VcE= 0 100 uA

hFE DC Current Gain IC= 1A; VCE= 5V 15 40

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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