Si2301ADS: Vishay Siliconix

Si2301ADS
New Product
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET

PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.130 @ VGS = 4.5 V 0.190 @ VGS = 2.5 V
ID (A)b
2.0 1.6
TO-236 (SOT-23)
1 3 D
Top View Si2301DS (1A)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C PD TJ, Tstg TA= 25_C TA= 70_C ID IDM IS 0.75 0.9 0.57 55 to 150
Symbol
VDS VGS
5 sec
20 "8 2.0 1.6 10
Steady State
Unit
V
1.75 1.4 A 0.6 0.7 0.45 W _C
THERMAL RESISTANCE RATINGS

Parameter
Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 71835 S-20617Rev. B, 29-Apr-02 www.vishay.com RthJA
Symbol
Typical
115 140
Maximum
140 175
Unit
_C/W
Si2301ADS
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Limits Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55_C VDS v 5 V, VGS = 4.5 V ID(on) VDS v 5 V, VGS = 2.5 V VGS = 4.5 V, ID = 2.8 A rDS(on) gfs VSD VGS = 2.5 V, ID = 2.0 A VDS = 5 V, ID = 2.8 A IS = 0.75 A, VGS = 0 V 6 3 0.093 0.140 6.5 0.80 1.2 0.130 0.190 W S V A 20 0.45 0.95 "100 1 10 mA V nA
Symbol
Test Conditions
Min
Typ
Max
Unit
On-State Drain Currenta
Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = 6 V, VGS = 0, f = 1 MHz VDS = 6 V, VGS = 4.5 V ID ^ 2.8 A 4.2 0.8 0.8 500 115 62 pF 10 nC
Switchingc
td(on) Turn-On Time tr td(off) tf Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600 VDD = 6 V, RL = 6 W ID ^ 1.0 A, VGEN = 4.5 V RG = 6 W 6 30 25 10 25 60 ns 70 60
Turn-Off Time
www.vishay.com
Document Number: 71835 S-20617Rev. B, 29-Apr-02
Si2301ADS
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
Vishay Siliconix
Output Characteristics
VGS = 5, 4.5, 4, 3.5, 3 V
10
Transfer Characteristics
8 I D Drain Current (A)
2.5 V I D Drain Current (A)
TC = 55_C
25_C 6 125_C
2V
0, 0.5, 1 V
2 1.5 V 0 0.0
0 0 1 2 3 4 5
0.5
1.0
1.5
2.0
2.5
3.0
VDS Drain-to-Source Voltage (V)
VGS Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current

0.6 800
Capacitance
0.5 r DS(on) On-Resistance ( W ) C Capacitance (pF) 600 Ciss
0.4
0.3 VGS = 2.5 V VGS = 4.5 V 0.1
400
0.2
200 Coss Crss
0.0 0 2 4 6 8 10
0 0 4 8 12 16 20
ID Drain Current (A)
VDS Drain-to-Source Voltage (V)
5 VDS = 10 V ID = 3.6 A V GS Gate-to-Source Voltage (V) 4
Gate Charge
1.6
On-Resistance vs. Junction Temperature

VGS = 4.5 V ID = 3.6 A
1.4 r DS(on) On-Resistance ( W ) (Normalized) 0 1 2 3 4 5
1.2
1.0
0.8
0.6 50
25
25
50
75
100
125
150
Qg Total Gate Charge (nC)
TJ Junction Temperature (_C)
Document Number: 71835 S-20617Rev. B, 29-Apr-02
www.vishay.com
Si2301ADS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10 0.6
On-Resistance vs. Gate-to-Source Voltage
0.5 1 I S Source Current (A) TJ = 150_C r DS(on) On-Resistance ( W )
0.4 ID = 3.6 A
0.1 TJ = 25_C
0.3
0.2
0.01
0.1
0.001 0 0.2 0.4 0.6 0.8 1.0 1.2
0.0 0 2 4 6 8
VSD Source-to-Drain Voltage (V)
VGS Gate-to-Source Voltage (V)
Threshold Voltage
0.4 10
Single Pulse Power
0.3
V GS(th) Variance (V)
0.2 ID = 250 mA 0.1 Power (W) 6
0.0 2
0.1
0.2 50
25
25
50
75
100
125
150
0 0.01
0.10
1.00
10.00
100.00
1000.00
TJ Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient

2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2
Notes:
0.1 0.1 0.05 0.02
PDM t1 t2 1. Duty Cycle, D = t1 t2
2. Per Unit Base = RthJA = 62.5_C/W 3. TJM TA = PDMZthJA(t)
Single Pulse 0.01 104 103 102 101 1
4. Surface Mounted
10
100
600
Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71835 S-20617Rev. B, 29-Apr-02

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Si2301ADS

P-Channel 2.5-V (G-S) MOSFET

Top View Si2301DS (1A)* *Marking Code

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

1.75 1.4 A 0.6 0.7 0.45 W _C

THERMAL RESISTANCE RATINGS

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

On-State Drain Currenta

Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage

Document Number: 71835 S-20617Rev. B, 29-Apr-02

8 I D Drain Current (A)

2.5 V I D Drain Current (A)

VDS Drain-to-Source Voltage (V)

VGS Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.5 r DS(on) On-Resistance ( W ) C Capacitance (pF) 600 Ciss

0.3 VGS = 2.5 V VGS = 4.5 V 0.1

200 Coss Crss

ID Drain Current (A)

VDS Drain-to-Source Voltage (V)

5 VDS = 10 V ID = 3.6 A V GS Gate-to-Source Voltage (V) 4

On-Resistance vs. Junction Temperature

1.4 r DS(on) On-Resistance ( W ) (Normalized) 0 1 2 3 4 5

Qg Total Gate Charge (nC)

TJ Junction Temperature (_C)

Document Number: 71835 S-20617Rev. B, 29-Apr-02

On-Resistance vs. Gate-to-Source Voltage

0.5 1 I S Source Current (A) TJ = 150_C r DS(on) On-Resistance ( W )

0.001 0 0.2 0.4 0.6 0.8 1.0 1.2

VSD Source-to-Drain Voltage (V)

VGS Gate-to-Source Voltage (V)

Single Pulse Power

V GS(th) Variance (V)

0.2 ID = 250 mA 0.1 Power (W) 6

Normalized Thermal Transient Impedance, Junction-to-Ambient

0.1 0.1 0.05 0.02

PDM t1 t2 1. Duty Cycle, D = t1 t2

2. Per Unit Base = RthJA = 62.5_C/W 3. TJM TA = PDMZthJA(t)

Single Pulse 0.01 104 103 102 101 1

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