Transistors
Transistors
Transistors
Nthita
22j0o40033
nel Length modaltion
n the Case or inversion code,ue SYVTH
Vhsat Vp
N AL
VGs<0’aCeurnulation
ALNL ocvGse VrH Depletin
Vnctt
VosA0 (sgtly qrter)
Vbc>)Dmore at)
I-Vps Cuyes for Vaous Vas
Nysevr (depletin)
VDcat
(3) ot M
Second onder effecta of
modutatioo
i) channel Length
) vetocity saturalieo
degndatioo
e) No bibty
eftect,
t) Tbreehol4 voltage- body
v) sub thrchold voltage
u) Drain puneh thugh
-Hot eleetronr
vi) rpact lnigatig
1y channet lengt modulatioo .
length of the channel changes with changig
the dr
-’As Vnc in oreas e, t causes the
Janctio to
edueo he lengt of th channel achich impac
reduces
The egn
modet cODeht en must be modifled to
A chanrnel length
The
etet f channel tength mDdulatisn beeonemore
for Smalley featne Gizes.
ontuced
,wohin a kigh impetene
hs, ohen a uront cource io Tequlred,
inerats because
) Valoetty atunalion:
velotytncases oith tncasng slectrie f tda
VepE
4Hgh electrie faldi (vo:), cansen nokk egrad
tVentuatty lending to a eonstard velocitctne fie n reach
’Houweves once the ctca ater ale
any funy
veleeit ol te caaeTs dos not increasg
due to an incoeASe te of colion and eares Scatterns
vda catuoro
Goerrte, slectsefalG
CE)
VÀ drift veloiy
beticas elect
decreas
atsbtkty dcn th incasi tnperaure .
transfe
charactenciey
Denatio
thransfe
eharacteeties dueto
Vas
Aqpndatis
P- substat e Ve
Vas
)brain punch -through.
yThe Drain volbnge NAc cveats an eleetme feldsthat aftet
te teshold voltae.
’It OCeus whery the
hot
chift of troehold
1S8ue,
5) Lefer &2.
)I, Vs
voltage
NMOL -2V
VG>o
V
n-chan enhahcenent
n-channet
node deplefion
mate.
PBN
zete
tules
-ut
-A
NOR
ACr an n- channel device oith lt5 Source and ebctt
qroundee (te, v Vge ov)
for any value of Vae operatien olta
when Vace D accmulatio),the Gpurce to doain path
consista f tuo Alack to blact diod es
0ne af these oiode s
alny biaed
4he traln votage poli
-type Sulbetoate
ouTce Drain
harnel
kody
rte
channe
ntype Gubctt
PMOS
Zn
netaljoide oLide
-Accmtalu deplitis
1! Drau the schenmale diagpron af the giren
brmlean loe
sules.
|A 3 B 3 cbtD4 E
CNOS nvte U a dertee i.e wed t
c'rcuiti.
The voOTk0ngf CN0s iventer in the Same a othe
PTS
whthe boyo
Co input vo ltrge gvon
von ttoo -the
CNOS nerte
hen HAe CNOs thanststor ie Suoitchd on oherreas the NOs
tacnis-to wois switeh off by lowng the foo ef eletn
keugh-the gat tmihat qunmtig igb looje outut
vettnge -to the cos inverto
When the
ohereay the
hnthe pyos -tranistr le Soitchet off
JNOS toanistn iU be Sotched on
ehasactencis ef
poscen consuyp
Notee magin
-times
3.
Conplematany operatin
n ashetdk asacts shich oater the over
hayer oxltaio
pces:
proces.
tn
idatiro 12'
rgin of
qate ":-femat eht
polyaicen. t kes Depsi lo
aed. chloe hydo uing of
Sio, Lemova 9:
solvant chemca
Lger hetrrst of
wohele Eemeval 1-
hear
ticuntapose4 :temevnd
of sly
polgmeiged
sdst
Fhotort
Substile photomist
T5e
expredt
Uv no i Mastin 4:
a aswsed Hencil
ts -
the over Mask
enulion Sensitire photo aoffiln
theprocen thie Th
coat
ed lsteT In
woth
a Grouoing &!ttep
stetphetore
: ef
ehamber an tn
t oidatin
Subetrat
o loooc
and ytigguaty to wpoingthe
rcen tdatio
cted sele ibctte
is Con k
falietig for base oubtoatea eheesea tep-1
CNOSfabnetin
poct -well wing (D
clepts egiens
a
denloped for the fonmation ef te vminalh of wNOS
nt
Gubctate
beplztiro
Pype Substat
Tovevsion! -
Vos
nt t
Pty shdctrt
nchanney
P-type ubstte
prestien by applging eapact ton analo%
.nseET at differert mode of operatio
Ceteff ode:
VDS
Los nCoz
Baturatio Leyim
h
wshen Vbs inceay es the te deplitn regjon tnlages
-the movestouad the Source.
t5rsholy voltag
The thrshol voltage, often denotd a Nt 's a
Crtiat parametes that detemhs the onct of Nbe
ConductinIt repscnt the got voltrg at ws
the OsftT jwst begins to eornduet tor) turn bn. Vr.
-factors,
eharacteistios of -the
the MOS PET S be tecbnolo
bn the co0k
b it fabieatio.t depends
the mactea nolwed,-the oide theknen angthe ehana
dletibttion n the Bem condueton
Bhody Efet
bvdy fet alo tnown as the back gat fut
o) Gubstat effect fers to the change in threshol
Aue to te vaatog n the
the body Co) gubtyat of the MosFLT.
V 2w
Vbs(Vg-Vs)-VH Vys-y- Vov
2
Vps
Vov
ineay
2 P-We!
3- Tioin tube
Pwell
peces eKcLrt
he p-edl poces is imtlar to n-boel
that he ntypL Bubetoate b ed and
are lamed ot.
diuions
Lfer:2Q Co
Tuoin tube proc
Vaious teps invo lved in theL fabietion of cNes
Ming tuoin -tube method are as folouoc :
s wwed.
lotch in the chip
2.The vo) th measuored th
oely.
T5e fomatiog of tubes for P ant N
4- Thin ode constnctio for aotectis from eontank
duing diffurim proceM.
C &ouute and dain ane
methods